Sequence plays an important role in self-assembly of 3D complex structures, particularly for those with overlap, intersection, and asymmetry. However, it remains challenging to program the sequence of self-assembly, resulting in geometric and topological constrains. In this work, a nanoscale, programmable, self-assembly technique is reported, which uses electron irradiation as "hands" to manipulate the motion of nanostructures with the desired order. By assigning each single assembly step in a particular order, localized motion can be selectively triggered with perfect timing, making a component accurately integrate into the complex 3D structure without disturbing other parts of the assembly process. The features of localized motion, real-time monitoring, and surface patterning open the possibility for the further innovation of nanomachines, nanoscale test platforms, and advanced optical devices

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Formation of patterned metal and semiconductor (e.g. silicon) nanowires is achieved using anodic aluminum oxide (AAO) templates with porous structures of different heights resulting from an initial step difference made by etching the aluminum (Al) thin film with a photoresist developer prior to the anodization process. This approach allows for the growth of vertically aligned nanowire arrays on a metal substrate, instead of an oriented semiconductor substrate, using an electroplating or a chemical vapor deposition (CVD) process. The vertically aligned metal and semiconductor nanowires defined on a metal substrate could be applied to the realization of vertical 3D transistors, field emission devices, or nano-micro sensors for biological applications.

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