A detailed description of the electronic properties, chemical state, and structure of uniform single and few-layered graphene oxide (GO) thin films at different stages of reduction is reported. The residual oxygen content and structure of GO are monitored and these chemical and structural characteristics are correlated to electronic properties of the thin films at various stages of reduction. It is found that the electrical characteristics of reduced GO do not approach those of intrinsic graphene obtained by mechanical cleaving because the material remains significantly oxidized. The residual oxygen forms sp3 bonds with carbon atoms in the basal plane such that the carbon sp2 bonding fraction in fully reduced GO is ca 0.80. The minority sp3 bonds disrupt the transport of carriers delocalized in the sp2 network, limiting the mobility, and conductivity of reduced GO thin films. Extrapolation of electrical conductivity data as a function of oxygen content reveals that complete removal of oxygen should lead to properties that are comparable to graphene

Manganese oxides occur naturally as minerals in at least 30 different crystal structures, providing a rigorous test system to explore the significance of atomic positions on the catalytic efficiency of water oxidation. In this study, we chose to systematically compare eight synthetic oxide structures containing Mn(III) and Mn(IV) only, with particular emphasis on the five known structural polymorphs of MnO2. We have adapted literature synthesis methods to obtain pure polymorphs and validated their homogeneity and crystallinity by powder X-ray diffraction and both transmission and scanning electron microscopies. Measurement of water oxidation rate by oxygen evolution in aqueous solution was conducted with dispersed nanoparticulate manganese oxides and a standard ruthenium dye photo-oxidant system. No Ru was absorbed on the catalyst surface as observed by XPS and EDX. The post reaction atomic structure was completely preserved with no amorphization, as observed by HRTEM. Catalytic activities, normalized to surface area (BET), decrease in the series Mn2O3 > Mn3O4 ≫ λ-MnO2, where the latter is derived from spinel LiMn2O4 following partial Li(+) removal. No catalytic activity is observed from LiMn2O4 and four of the MnO2 polymorphs, in contrast to some literature reports with polydispersed manganese oxides and electro-deposited films. Catalytic activity within the eight examined Mn oxides was found exclusively for (distorted) cubic phases, Mn2O3 (bixbyite), Mn3O4 (hausmannite), and λ-MnO2 (spinel), all containing Mn(III) possessing longer Mn-O bonds between edge-sharing MnO6 octahedra. Electronically degenerate Mn(III) has antibonding electronic configuration e(g)(1) which imparts lattice distortions due to the Jahn-Teller effect that are hypothesized to contribute to structural flexibility important for catalytic turnover in water oxidation at the surface.

A simple and scalable exfoliation approach is developed to produce high‐quality single‐layer graphene sheets without the use of toxic reduction agents of expensive solvents. Graphite powders are exfoliated in a water solution of pyrene derivatives, which act as dispersion agents, healing agents, and electric “glue” during the thermal annealing process.

Integration of organic and inorganic electronic materials is one of the emerging approaches to achieve novel material functionalities. Here, we demonstrate a stable self-assembled monolayer of an alkylsilane grown at the surface of graphite and graphene. Detailed characterization of the system using scanning probe microscopy, X-ray photoelectron spectroscopy, and transport measurements reveals the monolayer structure and its effect on the electronic properties of graphene. The monolayer induces a strong surface doping with a high density of mobile holes (n > 10(13) cm(-2)). The ability to tune electronic properties of graphene via stable molecular self-assembly, including selective doping of steps, edges, and other defects, may have important implications in future graphene electronics.

The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum ͑TMA͒ precursor is studied using medium energy ion scattering spectroscopy ͑MEIS͒ and x-ray photoelectron spectroscopy ͑XPS͒. MEIS measurements after one single TMA pulse show that ϳ65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

We report a systematic study of the bias stress effect at semiconductor-dielectric interfaces using singlecrystal organic field-effect transistors as a test bed. A combination of electrical transport and ultraviolet photoelectron spectroscopy suggests that this instability is due to a ground-state ͑i.e., occurring in the dark͒ charge transfer of holes from the accumulation channel of the semiconductor to localized states of a disordered insulator. The proposed model is not semiconductor specific and therefore provides a general analytical description of this instability in a variety of organic and inorganic band semiconductors interfaced with amorphous insulators.

Currently the preferred method for large-scale production of solution-processable graphene is via a nonconductive graphene oxide (GO) pathway, which uncontrollably cuts sheets into small pieces and/or introduces nanometer-sized holes in the basal plane. These structural changes significantly decrease some of graphene's remarkable electrical and mechanical properties. Here, we report an unprecedented fast and scalable approach to avoid these problems and directly produce large, highly conductive graphene sheets. This approach intentionally excludes KMnO(4) from Hummers' methods and exploits aromatic oxidation by nitronium ions combined with the unique properties of microwave heating. This combination promotes rapid and simultaneous oxidation of multiple non-neighboring carbon atoms across an entire graphene sheet, thereby producing only a minimum concentration of oxygen moieties sufficient to enable the separation of graphene sheets. Thus, separated graphene sheets, which are referred to as microwave-enabled low-oxygen graphene, are thermally stable and highly conductive without requiring further reduction. Even in the absence of polymeric or surfactant stabilizers, concentrated dispersions of graphene with clean and well-separated graphene sheets can be obtained in both aqueous and organic solvents. This rapid and scalable approach produces high-quality graphene sheets of low oxygen content, enabling a broad spectrum of applications via low-cost solution processing.

Hummers method is commonly used for the fabrication of graphene oxide (GO) from graphite particles. The oxidation process also leads to the cutting of graphene sheets into small pieces. From a thermodynamic perspective, it seems improbable that the aggressive, somewhat random oxidative cutting process could directly result in graphene nanosheets without destroying the intrinsic π-conjugated structures and the associated exotic properties of graphene. In Hummers method, both KMnO4 and NO2(+) (nitronium ions) in concentrated H2SO4 solutions act as oxidants via different oxidation mechanisms. From both experimental observations and theoretical calculations, it appears that KMnO4 plays a major role in the observed oxidative cutting and unzipping processes. We find that KMnO4 also limits nitronium oxidative etching of graphene basal planes, therefore slowing down graphene fracturing processes for nanosheet fabrication. By intentionally excluding KMnO4 and exploiting pure nitronium ion oxidation, aided by the unique thermal and kinetic effects induced by microwave heating, we find that graphite particles can be converted into graphene nanosheets with their π-conjugated aromatic structures and properties largely retained. Without the need of any postreduction processes to remove the high concentration of oxygenated groups that results from Hummers GO formation, the graphene nanosheets as-fabricated exhibit strong absorption, which is nearly wavelength-independent in the visible and near-infrared (NIR) regions, an optical property typical for intrinsic graphene sheets. For the first time, we demonstrate that strong photoacoustic signals can be generated from these graphene nanosheets with NIR excitation. The photo-to-acoustic conversion is weakly dependent on the wavelength of the NIR excitation, which is different from all other NIR photoacoustic contrast agents previously reported.