www.iqep.com, Phone: þ01 732 271 5990, Fax: þ01 732 412 9325 In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (<1%). The low R sh of 215 V/sq was obtained with an excellent standard deviation of 1.1% across 3 00 wafers. Lehighton RT contactless Hall tests show a high mobility of 1617 cm 2 /V s and sheet charge density of 1.76 Â 10 13 /cm 2 . DC Phys. Status Solidi A 207, No. 6 (2010) 1351 Original Paper 1352 S. Guo et al.: AlInN HEMT grown on SiC by MOVPE for millimeter-wave applications physica s s p status solidi a ß

We report transport properties measured from quaternary barrier InAlGaN high electron mobility transistor wafers on SiC substrates. With similar barrier thicknesses, higher mobility and sheet charge density were both demonstrated by a strained barrier quaternary In0.07Al0.75Ga0.18N HEMT comparing to a ternary In0.17Al0.83N HEMT with lattice matched barrier to the GaN buffer. With 1 nm AlN interlayer, sheet resistances of 218 Ω/□ and 228 Ω/□ were obtained from 4.8 nm and 4.4 nm barrier structures, respectively. Both structures also show excellent electron motilities. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to accelerate, and consequently the sheet resistant uniformity degrades due to the difficulty in individual thickness uniformity control at this level. Significant better uniformity was achieved after improvement in AlN process. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

AlGaN/GaN HEMTs are of interest for high power and high frequency device applications due to their superior material properties. MOCVD growth of GaN HEMTs shows great promise for scale-up volume production with high fabrication yield and subsequently low manufacture cost. Volume production of GaN HEMTs on 3" and 100 mm SiC has been demonstrated at IQE. Various characterizations have been used to evaluate the material quality, uniformity and epi growth reproducibility. SPC charts show superb wafer-to-wafer reproducibility with a Cpk of ~2.0 for sheet resistance uniformity. Lehighton, contactless Hall, XRD and Accent PL measurements show excellent wafer uniformity. Bow/Warp tests indicate that the epi growth process only adds up to 10 μm bow/warp. AFM measurements indicate an atomic smooth surface.