Thermoelectric materials provide a challenge for materials design, since they require optimization of apparently conflicting properties. The resulting complexity has favored trial-and-error approaches over the development of simple and predictive design rules. In this work, the thermoelectric performance of IV-VI chalcogenides on the tie line between GeSe and GeTe is investigated. From a combination of optical reflectivity and electrical transport measurements, it is experimentally proved that the outstanding performance of IV-VI compounds with octahedral-like coordination is due to the anisotropy of the effective mass tensor of the relevant charge carriers. Such an anisotropy enables the simultaneous realization of high Seebeck coefficients, due to a large density-of-states effective mass, and high electrical conductivity, caused by a small conductivity effective mass. This behavior is associated to a unique bonding mechanism by means of a tight-binding model, which relates band structure and bond energies; tuning the latter enables tailoring of the effective mass tensor. The model thus provides atomistic design rules for thermoelectric chalcogenides.

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