Solid-state light-emitting devices based on direct-bandgap semiconductors have, over the past two decades, been utilized as energy-efficient sources of lighting. However, fabrication of these devices typically relies on expensive high-temperature and high-vacuum processes, rendering them uneconomical for use in large-area displays. Here, we report high-brightness light-emitting diodes based on solution-processed organometal halide perovskites. We demonstrate electroluminescence in the near-infrared, green and red by tuning the halide compositions in the perovskite. In our infrared device, a thin 15 nm layer of CH3NH3PbI(3-x)Cl(x) perovskite emitter is sandwiched between larger-bandgap titanium dioxide (TiO2) and poly(9,9'-dioctylfluorene) (F8) layers, effectively confining electrons and holes in the perovskite layer for radiative recombination. We report an infrared radiance of 13.2 W sr(-1) m(-2) at a current density of 363 mA cm(-2), with highest external and internal quantum efficiencies of 0.76% and 3.4%, respectively. In our green light-emitting device with an ITO/PEDOT:PSS/CH3NH3PbBr3/F8/Ca/Ag structure, we achieved a luminance of 364 cd m(-2) at a current density of 123 mA cm(-2), giving external and internal quantum efficiencies of 0.1% and 0.4%, respectively. We show, using photoluminescence studies, that radiative bimolecular recombination is dominant at higher excitation densities. Hence, the quantum efficiencies of the perovskite light-emitting diodes increase at higher current densities. This demonstration of effective perovskite electroluminescence offers scope for developing this unique class of materials into efficient and colour-tunable light emitters for low-cost display, lighting and optical communication applications.

Fluorene‐free perovskite light‐emitting diodes (LEDs) with low turn‐on voltages, higher luminance and sharp, color‐pure electroluminescence are obtained by replacing the F8 electron injector with ZnO, which is directly deposited onto the CH3NH3PbBr3 perovskite using spatial atmospheric atomic layer deposition. The electron injection barrier can also be reduced by decreasing the ZnO electron affinity through Mg incorporation, leading to lower turn‐on voltages.

Bulk-heterojunction (BHJ) non-fullerene organic solar cells prepared from sequentially deposited donor and acceptor layers (sq-BHJ) have recently been promising to be highly efficient, environmentally friendly, and compatible with large area and roll-to-roll fabrication. However, the related photophysics at donor-acceptor interface and the vertical heterogeneity of donor-acceptor distribution, critical for exciton dissociation and device 2 performance, are largely unexplored. Herein, steady-state and time-resolved optical and electrical techniques are employed to characterize the interfacial trap states. Correlating with the luminescent efficiency of interfacial states and its non-radiative recombination, interfacial trap states are characterized to be about 50% more populated in the sq-BHJ devices than the ascast BHJ (c-BHJ), which probably limits the device voltage output. Cross-sectional energydispersive X-ray spectroscopy and ultraviolet photoemission spectroscopy depth profiling directly visualize the donor-acceptor vertical stratification with a precision of 1-2 nm. From the proposed "needle" model, the high exciton dissociation efficiency is rationalized. Our study highlights the promise of sequential deposition to fabricate efficient solar cells, and points towards improving the voltage output and overall device performance via eliminating interfacial trap states.

The fabrication of high‐resolution nanostructures in both poly(p‐phenylene vinylene), PPV, and a crosslinkable derivative of poly(9,9′‐dioctylfluorene), F8, using scanning near‐field optical lithography, is reported. The ability to draw complex, reproducible structures with 65000 pixels and lateral resolution below 60 nm (< λ/5) is demonstrated over areas up to 20 μm × 20 μm. Patterning on length‐scales of this order is desirable for realizing applications both in organic nanoelectronics and nanophotonics. The technique is based on the site‐selective insolubilization of a precursor polymer under exposure to the confined optical field present at the tip of an apertured near‐field optical fiber probe. In the case of PPV, a leaving‐group reaction is utilized to achieve insolubilization, whereas the polyfluorene is insolubilized using a photoacid initiator to create a crosslinked network in situ. For PPV, resolubilization of the features is observed at high exposure energies. This is not seen for the crosslinked F8 derivative, r‐F8Ox, allowing us to pattern structures up to 200 nm in height.