The crystal shape of Ni particles, dewetted in the solid state on sapphire substrates, was examined as a function of the partial pressure of oxygen (P(O2)) and iron content using scanning and transmission electron microscopy. The chemical composition of the surface was characterized by atom-probe tomography. Unlike other FCC equilibrium crystal shapes, the Ni crystals containing little or no impurities exhibited a facetted shape, indicating large surface anisotropy. In addition to the {111}, {100} and {110} facets, which are usually present in the equilibrium crystal shape of FCC metals, high index facets were identified such as {135} and {138} at low P(O2), and {012} and {013} at higher P(O2). The presence of iron altered the crystal shape into a truncated sphere with only facets parallel to denser planes. The issue of particle equilibration is discussed specifically for the case of solid-state dewetting.
As the lithography roadmap unfolds on its path towards ever smaller geometries, the pattern placement (Registration) requirements are increasing dramatically. This trend is further enhanced by anticipating the impact of innovative process solutions as double patterning where mask to mask overlay on the wafer is heavily influenced by mask registration error.In previous work 1 a laser based registration control (RegC) process in the mask periphery (outside the exposure field) was presented. While providing a fast and effective improvement of registration, the limitation of writing with the laser outside of the active area limits the registration improvement to ~25%. The periphery process can be applied after the pattern generation or after pellicle mounting and allows fine tuning of the mask registration.In this work we will show registration correction results where the full mask area is being processed. While processing inside the exposure field it is required to maintain the CD Uniformity (CDU) neutral .In order to maintain the CDU neutral several different laser writing steps are utilized. A special algorithm and software were developed in order to compute the process steps required for maintaining the CDU neutral from one side while correcting for mask placement errors on the other side.By applying the correction process inside the active area improvements of up to 50% of the 3S registration and values as low as 3 nm 3S after scale and ortho correction have been achieved. These registration improvements have been achieved while maintaining the CDU signature of the mask as measured by areal imaging with WLCD TM (Wafer Level CD Metrology tool from Carl Zeiss SMS).
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