In organic photovoltaic (OPV) devices fabricated with a double small-molecular layer, the power conversion efficiency strongly depends on the thickness of the organic donor layer (here, copper phthalocyanine). In other words, the power conversion efficiency increases with the donor layer thickness up to a specific thickness ( approximately 12.7 nm) and then decreases beyond that thickness. This trend is associated with the light absorption and carrier transport resistance of the small-molecular donor layer, both of which strongly depend on the layer thickness. Experimental and calculated results showed that the short-circuit current due to light absorption increased with the donor layer thickness, while that due to current through the donor layer decreased with 1/R. Since the total short-circuit current is the product of the light absorption current and current through the donor layer, there is a trade-off, and the maximum power conversion efficiency occurs at a specific organic donor layer thickness (e.g. approximately 12.7 nm in this experiment).
For organic light-emitting diodes (OLEDs), transparent singlecrystal-Si membranes were fabricated on a silicon-on-insulator (SOI) wafer. The SOI wafer included a buried layer of SiO 2 and Si 3 N 4 as an etch-stop layer. The etch-stop layer enabled fabrication of transparent single-crystal-Si membranes with various thicknesses, and the thinning technology is described For membranes with thicknesses of 72 and 5000 nm, the respective optical transmittances were 93%, and 9% for R (λ=660 nm), 91%, and 1 % for G (λ=525 nm), and 93%, and 0 % for B (λ=470 nm). Organic light-emitting diodes were then fabricated on transparent single-crystal-Si membranes with various top Si thicknesses. OLEDs with 72 and 5000 nm thick membranes and operating at 8.5 V observed luminance of 2260 and 123 cd/m 2 , respectively.
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