The degradation of CuInSe2 absorbers in ambient air is observed by the decay of the quasi-Fermi level splitting under well defined illumination with time. The decay is faster and stronger in absorbers with [Cu]/[In]<1 than in ones with a higher ratio. It can be attributed to the oxidation of the sample. Epitaxial films containing no Na show very similar trends, indicating that decay and oxidation are independent of the Na content. A standard CdS layer commonly used as buffer in solar cells, terminates the decay even over many months. Aged absorbers can be completely restored by a KCN etch.
Nanoisland films prepared by annealing thin gold films at high temperatures were imaged using scanning electron microscopy (SEM) and atomic force microscopy, and optically characterized through absorption spectroscopy. Thin gold films of effective thicknesses 2, 5 and 7 nm annealed at 500, 700 and 900 degrees C were fabricated and studied experimentally. The measured absorption characteristics in support of theoretical calculations showed that the shapes of gold islands were partial spheres. The position of the peak absorption wavelength measured with s-polarized light or at normal incidence confirmed that the island shape grew from a near-hemisphere towards a sphere with increasing annealing temperature. The SEM images confirmed that the size of islands increased from 15 nm in diameter to 40 nm in diameter as film thickness increased from 2 to 5 nm. The affect of the index of the substrate material on absorption characteristics were also studied by comparing the absorption spectra of gold island films on quartz and LaSF15 glass substrates. The use of gold nanoisland films for preparing localized surface plasmon resonance substrates was suggested as they held advantages over the gold colloid films.
We study defects in CuInSe 2 (CIS) grown under Cu-excess. Samples with different Cu/In and Se/metals flux ratios were characterized by thermal admittance spectroscopy (TAS), capacitance-voltage measurements (CV) and temperature dependent current voltage measurements (IVT). All samples showed two different capacitance responses, which we attribute to defects with energies around 100 and 220 meV. Plus the beginning of an additional step that we attribute to a freeze-out effect. By application of the Meyer-Neldel rule, the parameters of the two defects can be assigned to two different groups, both lying within the energy region of the so-called 'N1-defect' that has been observed for Cu-poor absorbers.
The piezoelectric response of solvothermally synthesized BaTiO3 (BT)–KNbO3 (KN) composites (the nominal BT/KN ratio was 1) with distinct interfaces was investigated. The x-ray diffraction pattern showed two distinct peaks began to merge into a singular broad peak at a two-theta position between (200) and (002) tetragonal-related peaks of BT. The transmission electron microscopy observation showed a heteroepitaxial interface region between BT single-crystal particles and deposited KN crystals. The large-field piezoelectric constant was 136 pC/N, which was three times larger than that of a sintered 0.5BT–0.5KN composite. The enhanced piezoelectric response was attributed to the strained epitaxial interface region.
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