The arsenic pressure dependence of Ga adatom surface diffusion in molecular beam epitaxy (MBE) on nonplanar substrates was investigated. By using in situ scanning microprobe reflection high-energy electron diffraction (µ-RHEED), the distribution of the growth rate of GaAs on the (001) surface near the edge of the (111)A or (111)B sidewall was measured under various arsenic pressures. The surface diffusion length of Ga adatom incorporation on the (001) surface derived from the distribution is on the order of micrometers and it shows a strong dependence on arsenic pressure. A simple model based on one-dimensional surface diffusion was proposed. With this theory, the lifetime of Ga adatom incorporation on other surfaces is obtained.
There is a product decomposition of a compact connected Lie group G at the prime p, called the mod p decomposition, when G has no p-torsion in homology. Then in studying the multiplicative structure of the p-localization of G, the Samelson products of the factor space inclusions of the mod p decomposition are fundamental. This paper determines (non-)triviality of these fundamental Samelson products in the p-localized exceptional Lie groups when the factor spaces are of rank ≤ 2, that is, G is quasi-p-regular.
The aim of this paper is to show that the p-local homotopy type of the gauge group of a principal bundle over an even-dimensional sphere is completely determined by the divisibility of the classifying map by p. In particular, for gauge groups of principal SU(n)-bundles over S 2d for 2 d p − 1 and n 2p − 1, we give a concrete classification of their p-local homotopy types.
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