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We analyze the carrier dynamics in MOSFETs under low voltage operation for a 90nm CMOS technology. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. The switching frequency is found to decrease with reduced voltage due to diminished inversion condition and thus driving capability, which can be modeled with increased transit delay.

transition for samples comprised of N spins. While we find power-law scaling of τ versus N for small Q 50 and N 40 2 , we observe a crossover to exponential scaling for larger Q. These results demonstrate that despite the ensemble optimization, broad-histogram simulations cannot fully eliminate the supercritical slowing down at strongly first-order transitions.

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