Their n-values are 1.03-1.04. Therefore, barrier height for NiSi is independent of Si orientation.The forward characteristics of the NiSi Schottky barrier diode formed by heat-treating Ni on Si(100) in UHV, and of the NiSi2 Schottky barrier diode formed by codepositing Ni and Si onto Si(100), are shown in Fig. 6. The n-value is 1.04-1.06 for both diodes. The barrier height is 0.67-0.68 eV. Similar results are obtained for Si(ll!). The XPS spectra for clean Si(100) and codeposited NiSi2 surfaces are shown in Fig. 7. The Si2p signal shifts to higher binding energy in the NiSi2. The XPS intensity ratio Ni3JSi2p = 0.29, which corresponds to the NiSi2 identified by x-ray diffraction. Similar XPS spectra are obtained for clean Si(111), and codeposited NiSi2 surfaces are obtained as shown in Fig. 8. That is, it is found that Si substrate orientation and silicide phase do not affect barrier height for thicker (->50 nm) Ni silicide. These effects differ from the case of thinner (<-30 nm) type-B NiSi2/Si(lll) and may be due to Fermipinning resulting from lattice mismatch between Ni silicide and Si (6).The present results show that variations in silicide characteristics apparently do not affect barrier height within experimental accuracy: SummarySilicide phase and Si substrate orientation were found not to affect Ni silicide barrier height.
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