To create approximately spherical structures with curved sidewalls, this paper presents a method for building a series of decreasing slopes along the sidewall of a circular truncated cone. The multistep ring-edge etching technology of first reducing the concentric mask and then cutting the top off to create a mesa shape can be used to form the slopes. This wet-etching method avoids the constraints of crystallographic properties with surfactant-added Tetramethylammonium hydroxide (TMAH), enabling the manufacture of successive given inclination angles, the precise modulation of the spherical curvature by reduction design of concentric masks, and the setting of etching time. The newly approximated spherical Si microstructure patterns can be used for microlenses, quartz crystal resonators, micropulleys, and other applications. The present research is an approach to fabricate advanced microelectromechanical systems (MEMS) curved-surface structures, extending the range of 3D structures fabricated by silicon wet etching.
A comparison of electric field measurements was carried out between January 2010 and July 2012 amongst fourteen national metrology laboratories at frequencies 1 GHz, 2.45 GHz, 10 GHz and 18 GHz at indicated field levels of 10 V/m, 30 V/m and 100 V/m. The identification of this intercomparison is CCEM.RF-K24.F. Two electric field probes provided by Amplifier Research have been measured as the travelling standards. The National Physical Laboratory (United Kingdom) acted as the pilot laboratory for the comparison. This report contains the results of the measurements.Main text.
To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/.The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).
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