The magnetooptical Faraday rotations of epitaxial films of Bi
x
Y3-x
Fe5O12 (Bi:YIG) grown on [111]-oriented gadolinium gallium garnet (GGG) substrates by pulsed laser deposition (PLD) were studied with bismuth content x = 0.5, 1.0, 1.5, 2.0, 2.5, and 3.0. The Faraday rotation angles, θF, of the films were measured by the method of rotating analyzer ellipsometry (RAE) with the photon energy varied from 1.5 to 3.5 eV. It was shown that in addition to the increase of the Faraday rotation with increasing x, the peaks of θF shifted toward the red region as x changed from 1.0 to 1.5. The peak positions of θF for the completely Bi-substituted iron garnet, Bi3Fe5O12 (BIG), were found at 2.4 and 2.8 eV with peak values as large as -23 deg/µm and 44 deg/µm, respectively
Microvascular invasion (MVI) of hepatocellular carcinoma (HCC) is a major risk factor for early recurrence and poor survival after curative surgical therapies. However, MVI can only be diagnosed by pathological examination following resection. The aim of this study is to identify serologic biomarkers for predicting MVI preoperatively to help facilitate treatment decisions. We used the sero-proteomic approach to identify antigens that induce corresponding antibody responses either specifically in the serum from MVI (+) patients or from MVI (−) patients. Six antigens were subsequently identified as HSP 70, HSP 90, alpha-enolase (Eno-1), Annexin A2, glutathione synthetase and beta-actin by mass spectrometry. The antibodies titers in sera corresponding to four of these six antigens were measured by ELISA and compared between 35 MVI (+) patients and 26 MVI (−) patients. The titers of anti-HSP 70 antibodies were significantly higher in MVI (−) patients than those in MVI (+) patients; and the titers of anti-Eno-1 antibodies were significantly lower in MVI (−) patients than those in MVI (+) patients. The results were subjected to multivariate analysis together with other clinicopathologic factors, suggesting that antibodies against HSP 70 and Eno-1 in sera are potential biomarkers for predicting MVI in HCC prior to surgical resection. These biomarkers should be further investigated as potential therapeutic targets.
This paper describes the structural and electrical properties of Al 2 O 3 thin films grown through atomic layer deposition onto Ge substrates over a wide deposition temperature range ͑50-300°C͒. From grazing-incidence X-ray reflectivity and X-ray photoelectron spectroscopy, we found that increasing the deposition temperature improved the Al 2 O 3 film density and its dielectric stoichiometry; nevertheless, dielectric intermixing between main Al 2 O 3 and interfacial GeO 2 appeared at temperatures above 200°C, along with degradation of the GeO 2 /Ge interface. Accordingly, a relatively large gate leakage current ͑J g ͒ and a high density of interfacial states D it ͑Ͼ10 13 cm −2 eV −1 ͒ were observed as a result of deterioration of the entire Al 2 O 3 /Ge structure at higher deposition temperatures. In addition, although subsequent high-temperature processing at 600°C in a N 2 ambient could relieve the oxygen-excessive behavior further, i.e., to provide a more stoichiometric film, the accompanying GeO x volatilization close to the dielectric interface caused greater damage to the electrical performance. Only forming gas annealing ͑H 2 /N 2 , 1:10͒ at low temperature ͑300°C͒ improved the capacitance-voltage characteristics of the Pt/Al 2 O 3 /Ge structure, in terms of providing a lower value of D it ͑ca. 6 ϫ 10 11 cm −2 eV −1 ͒, a lower value of J g , and a reduced hysteresis width.
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