There are conflicting results regarding the effect of the P450 oxidoreductase (POR) *28 genotype on the tacrolimus (TAC) pharmacokinetics (PKs) during the early post-transplantation period in adult renal transplant recipients. Thus, we characterized the impact of POR*28 on TAC PKs. We conducted a systematic review on the association between POR*28 and PKs of TAC in adult renal transplant recipients. Structured searches were conducted using PubMed, Web of Science, and Embase. TAC standardized trough concentration (ng/mL per mg/kg) data were extracted. Mean differences (MD) and their corresponding 95% confidence intervals (CIs) were used to identify the differences between the POR*28 genotype and PKs of TAC. The subgroup analysis was conducted according to CYP3A5 expression status. Six studies (n = 1061) were included. TAC standardized trough concentrations were significantly lower in recipients with the POR*28 allele compared to recipients with POR*1/*1 (MD: 8.30 ng/mL per mg/kg; 95% CI: 1.93, 14.67; p = 0.01). In the subgroup analysis, TAC standardized trough concentrations were lower for subjects who were POR*28 carriers than those who were POR*1/*1 in CYP3A5 expressers (MD: 20.21 ng/mL per mg/kg; 95% CI: 16.85, 23.56; p < 0.00001). No significant difference between POR*28 carriers and POR*1/*1 was found in the CYP3A5 non-expressers. The results of our meta-analysis demonstrated a definite correlation between the POR*28 genotype and PKs of TAC. Patients carrying the POR*28 allele may require a higher dose of TAC to achieve target levels compared to those with POR*1/*1, especially in CYP3A5 expressers.
In article number 2105485, Tae-Yeon Seong and co-workers experimentally demonstrate dynamic photoadaptation behavior of an integrated optoelectronic device array that mimics the functionality of the biological visual nervous system. The device array, which is designed to adapt to repeated optical stimuli that change according to external conditions, exhibits excellent performance. This autonomic response to stimuli is essential to the improvement of nextgeneration bionic electronics.
As the size of micro light-emitting diodes ( μLEDs) decreases, μLEDs encounter etching damage especially at the sidewalls that critically affects their properties. In this study, we investigated the influence of etching bias power ( Pbias) on the performance of μLEDs and found that the current–voltage and light output–current characteristics of μLEDs were enhanced when Pbias was reduced. It was shown that at low Pbias, the chemical reaction between etching gas and gallium nitride, rather than ion sputtering, dominated the etching process, leading to low plasma damage and rough surface morphology. Additionally, to understand the etching-induced surface roughening behaviors, various substrates with different threading dislocation densities were treated at low Pbias. It was found that for the sample (with p-contact size of 10 × 10 μm2), the efficiency droop was approximately 20%, although the current reached 10 mA due most probably to the suppressed polarization effect in the quantum well. It was further observed that the external quantum efficiency (EQE) was dependent on Pbias, where the lowest Pbias yielded the highest maximum EQE, indicating that the plasma damage was mitigated by reducing Pbias. Optimization of dry etching and polarization-suppression conditions could pave the way for realizing high-performance and brightness μLEDs for next-generation displays.
The stable electrical performance of micro-light-emitting diodes (micro-LEDs) is critical to display application. For micro-display application, the development of high-efficiency full color micro-LEDs (e.g., red, green, and blue emitters) is critical. In particular, despite the importance for the realization of high-efficiency red emitters, AlGaInP-based micro-LEDs have not been extensively investigated yet. Use of contacts to an n-AlInP layer can be effective in reducing the thickness of the epilayers and in improving the performance of red micro-LEDs.We investigated the effect of the interface morphologies of contacts to n-AlInP on the electrical stability of AlGaInP-based red micro-LEDs. After annealing, for the AuGe/Ni/Au contacts, heavily inhomogeneous interfacial reactions occurred across the whole contact/AlInP interface, whereas the Pd/Ge contacts showed relatively similar interfacial morphologies. Regardless of chip sizes (100 μm or 10 μm-size), micro-LEDs with Pd/Ge contacts gave lower and stable forward voltages than those with AuGe/Ni/Au contacts; the average forward bias voltages of the 10 and 100 μm-size micro-LEDs were 3.04 and 3.89 V at 50 A/cm2 for the AuGe/Ni/Au contact, respectively, and 2.08 and 2.7 V and Pd/Ge contact. Further, irrespective of the chip sizes, the micro-LEDs with the Pd/Ge contacts experienced less operation-time-induced degradation than the ones with the AuGe/Ni/Au contacts. Based on the STEM and electrical results, the spread of the forward voltages of micro-LEDs was explained in terms of the inhomogeneously reacted interfacial morphologies of AuGe/Ni/Au contacts to AlInP. The results indicate that the Pd/Ge contact can serve as a promising contact to n-AlInP for high-performance AlGaAsP-based red emitters for display application.
For micro-light-emitting diode (LED)-based display applications, such as virtual reality and augmented reality, high-performance Ohmic contacts (namely, the improvement of current injection efficiency) is vital to the realization of high-efficiency micro-LEDs. The surface Fermi level pinning characteristics could be comprehended in terms of the relation between work function of metals (ΦM) and Schottky barrier height (SBH, ΦB). In this study, we have investigated the surface Fermi level pinning characteristics of (001) n-AlInP surfaces by employing Schottky diodes with different metals. With an increase in the temperature, ΦB increases linearly and ideality factors (n) decreases. This behavior is related to the barrier height inhomogeneity. Inhomogeneity-model-based ΦB is evaluated to be in the range of 0.86 – 1.30 eV, which is dependent on the metal work functions and are similar to those measured from capacitance-voltage relation. Further, The S-parameter, the relation between B and M (dB/dM), is 0.36. This is indicative of the partial pinning of the surface Fermi level at the surface states placed at 0.95 eV below the conduction band. Furthermore, it is also shown that (NH4)2S-passivation results in an increases the mean SBH and the S-parameter (e.g., 0.52).
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