1999) Evaluation of diamond film on cemented carbide substrate, Surface Engineering, 15:2, 105-108To link to this article: http://dx.Diamond films with a thickness of 8 mm were deposited using plasma jet chemical vapour deposition on to cemented carbide substrates that had been chemically etched and bombarded by Ar-H 2 plasma before synthesis. T he interfaces and cross-sections of the diamond films and cemented carbide substrates were analysed by SEM, T EM, and Fourier transform Raman spectroscopy. Under the deposition conditions used, the typical structure of the diamond film and cemented carbide substrate was diamond film/thin graphite layer/fine W C particle layer/residual chemical etch layer/cemented carbide substrate. Cobalt, which diVused f rom the substrate to the interface, caused the formation of a graphite layer which was several hundreds of nanometres thick. However in some regions diamond particles grew directly on to the cemented carbide.
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