As a novel X-ray focusing technology, lobster-eye micropore optics (MPO) feature both a wide observing field of view and true imaging capability, promising sky monitoring with significantly improved sensitivity and spatial resolution in soft X-rays. Since first proposed by Angel, the optics have been extensively studied, developed and trialed over the past decades. In this Letter, we report on the first-light results from a flight experiment of the Lobster Eye Imager for Astronomy, a pathfinder of the wide-field X-ray telescope of the Einstein Probe mission. The piggyback imager, launched in 2022 July, has a mostly unvignetted field of view of 18.°6 × 18.°6. Its spatial resolution is in the range of 4′–7′ in FWHM and the focal spot effective area is 2–3 cm2, both showing only mild fluctuations across the field of view. We present images of the Galactic center region, Sco X-1, and the diffuse Cygnus Loop nebular taken in snapshot observations over 0.5–4 keV. These are truly wide-field X-ray images of celestial bodies observed, for the first time, by a focusing imaging telescope. Initial analyses of the in-flight data show excellent agreement between the observed images and the on-ground calibration and simulations. The instrument and its characterization are briefly described, as well as the flight experiment. The results provide a solid basis for the development of the present and proposed wide-field X-ray missions using lobster-eye MPO.
Saturation of the junction voltage in GaN-based laser diodes (LDs) is studied. It is found that there is a bump above the lasing transition in the I(dV/dI)-I curve, instead of a dip as that for GaAs-based LDs. The bump in I(dV/dI)-I curve moves to higher currents along with the lasing threshold. A model considering ambipolar conduction and electron overflow into p-AlGaN cladding layer due to poor carrier confinement in active region is used to explain the anomaly. The characteristic temperature of GaN-based LD is obtained by fitting threshold currents determined from I(dV/dI)-I curves. Moreover, it is found that GaN-based LDs show characteristics with a nonlinear series resistance, which may be due to the electron overflow into p-AlGaN cladding layer and the enhanced activation of Mg acceptors.
Time-resolved light-current curves, spectra, and far-field distributions of ridge structure InGaN multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1ns under a pulsed current condition. Results show that the thermal lensing effect clearly improves the confinement of the higher order modes. The thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. The threshold current for the higher modes decreases by about 5mA in every 10ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase.
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