The line shape of cyclotron resonance (CR) absorption is investigated for a two-dimensional electron gas (2DEG) in modulation-doped GaInAs/AlInAs narrow SQW structures. CR absorption is measured as functions of far infrared (FIR) frequency, temperature, and carrier concentration. At low temperature and short FIR wavelengths, a well-defined filling-factor-dependent quantum oscillation structure is obtained for samples with high 2DEG concentrations, exhibiting clear maxima and minima and a phase change point at the top of the CR peak. The modulated scattering is attributed to short-range scatterers originating mainly from alloy scattering. A part of the contribution comes from ionized impurity scattering. The analysis of the temperature dependence of the CR line width and Hall mobility gives additional support to this argument. An electron effective mass as high as 0.063m0 in Ino.53 Gao,,,As is observed due to the non-parabolicity effect.La resonance cyclotron (R.C.) d u n gaz bidimensionel d'electrons (2DEG), confines dans des puits quantiques ttroits obtenus dans des structures GaInAs/AlInAs a modulation de dopage, est etudite. La R.C. est mesuree en fonction de la frequence dexcitation dans l'1.R. lointain, de la temperature et de la densite de porteurs. Pour les plus courtes longueurs d'onde des oscillations quantiques de I'intensite d'absorption sont clairement mises en evidence a basse temperature. L'ttude de la forme de la R.C. pour une gamme ktendue de temperatures et d'energies d'excitation ainsi que la comparaison avec les resultats de mesures de Hall permettent d'analyser la diffusion des porteurs dans ce systeme. Cette diffusion est attribuee pour la plus grande part a une distribution de potentiels diffuseurs, a courte portke provenant du desordre d'alliage. Enfin, la valeur elevke de la masse effective m* = 0.063~1, mesuree dans l'echantillon ayant la plus forte concentration de porteurs est attribute a un fort effet de nonparabolicitt.
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