We report the growth of α-Ga 2 O 3 on 𝑚-plane α-Al 2 O 3 by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for α-Ga 2 O 3 (10 10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-oflane mosaic spread when MOCATAXY is employed for the growth of α-Ga 2 O 3 . Through the use of In-mediated catalysis, growth rates over 0.2 μm hr −1 and rocking curves with full width at half maxima of ∆𝜔 ≈ 0.45 • are achieved. Faceting is observed along the α-Ga 2 O 3 film surface and is explored through scanning transmission electron microscopy.
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