The unusual behavior of Cu S/CdS s o l a r c e l l s i s better described with spacg-charge-limited current (SCL I ) than with standard junction models.The SCL I t h e o r y p r o v i d e s t h e f i r s t q u a n t i t a t i v e explanation of these devices' I -V c h a r a c t e r i s t i c s including their non-exponential form, the dark-1 ight crossover, the temperature independent slope i n a d d i t i o n t o q u a l i t a t i v e l y m o d e l i n g t h e v o l t a g e variation of capacitance. This is accomplished with trapping parameter values well known t o be c h a r a c t e r i s t i c o f Cu compensated CdS. It i n d icates that the voltage dependence o f c u r r e n t i s controlled by mechanisms e n t i r e l y d i f f e r e n t t h a n previously proposed with important implications f o r d e v i c e f a b r i c a t i o n and o p t i m i z a t i o n and u l t imate device performance.
Determining the detector contribution or the total system resolution of a Ge(Li) detector by quadrature subtraction or addition of electronic noise introduces serious error due to the non-Gaussian effects of carrier trapping. The contributions of electronic noise and detector spread to the total system resolution are found by computer spectrum simulation to be greater than expected. The conclusions are substantiated by agreement with experimental measurements.
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