This paper presents the behavior of PIN photodiodes after combined gamma and neutron irradiation. Different types of PIN photodiodes have been exposed first to gamma and then to neutron irradiation. I-V characteristics (current dependence on voltage) of photodiodes have been measured after each of these irradiations. It has been noted that the photocurrent level after the neutron irradiation is higher than before it, which is not consistent with the current theories about the effects of neutron radiation on semiconductors. In order to explain this behavior of the photodiodes, the Monte Carlo simulation of photon transport through the material has been used. It is proposed that a possible cause for current enhancement are defects in semiconductor created by gamma irradiation and effects of neutron irradiation on these defects. The results can be explained by an intercentre transfer of charge between defects in close proximity to each other. The aim of this paper is to investigate the improvement possibilities of the I-V characteristics of PIN photodiodes, and photodetectors in general, damaged by gamma irradiation. [Projekat Ministarstva nauke Republike Srbije, br. 171007
The vari a tions in the thresh old volt age shift in p-chan nel power VDMOSFET dur ing the gamma ray ir ra di a tion was in ves ti gated in the dose range from 10 to 100 Gy. The in ves ti gations were per formed with out the gate bias and with 5 V gate bias. The de vices with 5 V gate bias ex hibit a lin ear de pend ence be tween the thresh old volt age shift and the ra di a tion dose. The den si ties of ra di a tion-in duced fixed and switch ing traps were de ter mined from the sub-thresh old I-V char ac ter is tics us ing the midgap tech nique. It was shown that the cre ation of fixed traps is dom i nant dur ing the ir ra di a tion. The pos si ble mech a nisms re spon si ble for the fixed and switch ing traps cre ation are also an a lyzed in this pa per.
tri cal En gi neer ing, Uni ver sity of Bel grade, Bel grade, Ser bia 2 Ra di a tion and En vi ron men tal Pro tec tion De part ment, Vin~a In sti tute of Nu clear Sci ences, Uni ver sity of Bel grade, Bel grade, Ser bia 3 In sti tute of Elec tri cal En gi neer ing "Nikola Tesla", Bel grade, Ser bia Sci en tific pa per
Photo and nuclear radiation induced processes are considered through the
interaction of radiation with semiconducting, metallic and other materials,
including the scintillator materials. The improvement of component efficiency
by the use of quantum generators, trimming and hybrid processes with nuclear
radiation has been analyzed. The studied processes can be positive or
negative depending on application. Besides the experimental approach to the
processes and chosen interactions, the analytical description of our
experiments, as well as ones from other references, has been performed. The
contemporary couplings between the nuclear physics, laser techniques and
respective dosimetric aspects have been considered. [Projekat Ministarstva
nauke Republike Srbije, br. II45003 i br. TP 35046]
This work con sid ers the man i fes ta tion of spon ta ne ous break downs of Gei ger-Mueller counters. This is an ex per i men tal type of work. The rea sons lead ing to the spon ta ne ous breakdowns of Gei ger-Mueller coun ters have been ana lysed un der con trolled lab o ra tory con ditions. The ex per i ments were car ried out un der the "con stant volt age". The tested Gei ger-Mueller cham bers were com mer cial cham bers of the ra dial elec tric field and ho mog enous elec tric field. The ex per i men tal-sta tis ti cal meth ods were used in or der to choose the cham bers with iden ti cal fea tures (with 0.1 % of sta tis ti cal re li abil ity).The re sults of ex per iments showed that the spon ta ne ous break down of the Gei ger-Mueller coun ter hap pens even in the con di tions of shield ing. They also showed that those break downs have cu mu la tive features. The rea son for that is a pos i tive feed back be tween the spon ta ne ous break downs. The ex pla na tion is con firmed and quan ti fied by the work ing gas fil ter ing ex per i ments.
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