Phosphorous and nitrogen dual acceptor doped p-type ZnO (PNZO) have been deposited by spray pyrolysis method on glass substrates. An equimolar doping concentration of P and N were varied from 0.25-1.25 at% with a step of 0.25 at%. Preferred orientation along (002) planes with hexagonal wurzite structure was observed from structural analysis. Morphological analysis reveals uniform distributions of grains. Electrical studies showed dual acceptor doping of P and N in ZnO results in p-type behavior. The optimum doping concentration of P and N was found to be 0.75 at% which exhibited hole concentration of 4.48 × 10 18 cm −3 and low resistivity value of 9.6 Ω.cm. Photoluminescence (PL) studies revealed that, as-deposited films exhibit strong UV emission at 383 nm of the spectrum. The surface morphology of the optimum PNZO (0.75 at%) samples were further modified in the form of vertically aligned pencil-like nanowires by modified aqueous chemical growth (ACG) process. During ACG process, more acceptor related defects such as oxygen interstitials (O i ) were formed in the PNZO nanopencils. These acceptor defects induce enhanced emission in the visible region (400 nm to 700 nm) and also promote stable p-type characteristics.
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