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A Monolithic Active Pixel Sensor (MAPS) for charged particle tracking based on a novel detector structure has been proposed, simulated, fabricated and tested. This detector is inseparable from the readout electronics, since both of them are integrated on the same, low-resistivity silicon wafer standard for a CMOS process. The individual pixel is comprised of only three MOS transistors and a photodiode collecting the charge created in the thin undepleted epitaxial layer. This approach provides a low cost, high resolution and thin device with the whole detector area sensitive to radiation (100% fill factor). Detailed device simulations using the ISE-TCAD package have been carried out in order to study the charge collection mechanism and to validate the proposed idea. In order to demonstrate viability of the technique, two prototype chips were successively fabricated using 0.6 m and 0.35 m CMOS processes. Both chips have been fully characterized. The pixel conversion gain has been calibrated using a 55 Fe source and prototypes have been exposed to a 120 GeV/c pion beam at CERN. The final test results with emphasis on the first prototype are reviewed. The experimental data is preceded by general design ideas and simulation results.

We demonstrate efficient generation of picosecond narrow-bandwidth pulses by frequency mixing of broadband opposite chirped pulses in a type I doubling crystal. This procedure allows us to produce picosecond pulses that are perfectly synchronized with femtosecond pulses. The experiment shows a decrease of the initial bandwidth by a factor of more than 30, while a high conversion efficiency is maintained.

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