Two solutions for selectively etching GaAs on InGaAs and GaAs/A1GaAs on InGaAs are presented. A solution of H202/NH4OH is shown to have a GaAs etch rate more than 50 times higher than the etch rate of In0.1Ga0.gAs. A solution of K3Fe(CN)~e(CN)6 etches both GaAs and A10.3Ga0.TAs selectively relative to InGaAs, with a selectivity of 8 or more for In0.12Gao.88As.
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