InSbN p-n junctions prepared by N + and Mg + implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. The measured peak wavelengths are consistent with the bandgaps of the alloys calculated using a 10-band k . p model based on In-N bond.Introduction: It is well known that GaAs-based quantum well structures and HgCdTe-based photodiodes are widely used for long wavelength photodetections [1,2]. Recently, InSbN alloys have attracted great interest owing to their importance in fundamental research and potential applications for long wavelength photodetection [3][4][5][6]. Murdin et al. have reported that the Auger recombination rate in the InSbN alloy is only about one third of that of the equivalent bandgap HgCdTe using a time-resolved pump-probe technique [3]. They have also confirmed the increasing of electron effective mass in the alloys by cyclotron resonance [4]. Veal et al. have presented experimental evidence of a negative bandgap in a thin layer of InSbN fabricated by low energy N implantation using high-resolution electron-energy-loss spectroscopy [5]. As far as device application is concerned, there is no report on InSbN-based photodiodes for photodetection of mid to long wavelength infrared radiation. In this Letter, we report for the first time the successful fabrication of an InSbN p-n junction photodiode by direct N + and Mg + implantation into InSb wafers and demonstration of significant photo-response in the long wavelength infrared range.
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