No abstract

In this paper, we investigated the feasibility of cerium oxide (CeO 2 ) films as buffers layer of MFIS (metal ferroelectric insulator semiconductor) type capacitors. CeO 2 layer were prepared by a two-step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By applying a cerium (Ce) metal seed layer of 4 nm, unwanted SiO 2 layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. After N 2 plasma treatment, the leakage current was reduced by about 2-orders. By employing a N 2 plasma treatment, we were able to successfully obtain good properties at the interface between the buffer layer and the Si substrate.