Electron transport through a lithographically defined single-island single-electron transistor ͑SET͒ is studied with and without illumination by microwave radiation. The SET is defined from 30-nm n-type phosphorous doped SiGe at a doping density of 10 19 cm −3 . The device was characterized at mK temperatures in the absence of illumination and exhibited single island Coulomb-blockade behavior. Further experiments were then carried out in the presence of radiation where pumping currents associated with photon assisted tunneling were observed. The device behavior was finally analyzed with the help of simulation software where methods for relating the radiation coupling characteristics to the SET were studied.

Abstract-Source-gated transistors (SGTs) have been made in thin layers of polysilicon formed by excimer laser crystallization of amorphous silicon. It is shown that the main features of the SGT, namely a low saturation voltage and high output impedance can be obtained in poly-silicon. Furthermore the nature of the source barrier enabled it to be pulled down by the influence of the gate to low values giving small activation energies for current transport and reduced temperature sensitivity in the on-state.

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