Absnact -The performance of a 200W push-pull device and a llOW single-ended device, both using state-of-the-art silicon RF-LDMOS die technology, is described. In the Z.1GHz band with a two-carrier WCDMA signal applied and a supply voltage of 2SV, -37dBc IM3 and 2526% drain efficiency is achieved at 38W and 19W respectively for the two devices. This combination of linear power and effcieney make these devices ideally suited for power amplifier designs in basestation transceiver systems.
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