In this paper, a physical model of the slow-wave (SW) microstrip lines based on a metallic-nanowire-filled-membrane substrate is presented for the first time. The model properly predicts the behavior of the SW transmission lines as shown by the experimental results. Two sets of transmission lines differing in oxide thickness with various widths were fabricated and characterized up to 70 GHz. The electrical model is valid for both oxide thicknesses and microstrips width. High-quality factors are obtained, above 40 from 30 GHz up to 70 GHz, paving the way for further designs of passive circuits, like power dividers or hybrid couplers, with good performance.
This paper proposes a new technology for slow wave microstrip lines based on a low-cost metallic-nanowire filled-membrane substrate (MnM-substrate). These transmission lines can operate from RF to millimeter-wave frequencies. The MnM-substrate consists in a dielectric material containing vertical metallic nanowires connected to a bottom ground plane. The innovative concept of the slow-wave microstrip lines on MnM-substrate is presented, as well as the electromagnetic considerations, fabrication process, and measurement results.Initial results show high relative dielectric constants (up to 43).Hence, it is possible to reach high-quality factor transmission lines within a great range of impedances, from 20 to 100 n, without critical dimensions.
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