A high-sensitivity magnetic field sensor based on the nano-polysilicon thin film transistors is proposed to adopt the nano-polysilicon thin films and the nano-polysilicon/single silicon heterojunction interfaces as the sensing layers. By using CMOS technology, the fabrication of the nano-polysilicon thin film transistors with Hall probes can be achieved on the ⟨100⟩ high resistivity single silicon substrates, in which the thicknesses of the nano-polysilicon thin films are 120 nm and the length width ratio of the channel is 320 µm/80 µm. When 𝑉DS = 5.0 V, the magnetic sensitivity and linearity is 264 mV/T and 0.23%f.s. (full scale), respectively. The experimental results show that the magnetic sensors based on nano-polysilicon thin film transistors with Hall probes exhibit high sensitivity.

Boron nitride nanotubes (BNNTs) were grown on stainless-steel substrates by ball milling–annealing in an N2/H2 atmosphere.

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