As for mainstream portable application (Mobile Phone, Tablet, Handset Gamer), the higher density (array 10 pitch <= 100um), higher thermal performance (better theta.lC than over-mold FCCSP) and lower profile (compare with over-mold FCCSP) is necessary for package developing. At present, followed the Moor's law, the bump pitch of 28nm wafer technology has shrunk from !80� ISOum into 130� 100um or even finer. Based on above considerations and product characteristic request, some suitable solution can be considered: Utilize Cu Pillar Bump to satisfy the fine pitch request and also implement Die Exposed for current FCCSP to achieve the lower profile & better thermal performance. As to come out an easy way to recognize the package type of this combination, the package type of "sFCCSP" (SPIL proposed FCCSP-Exposed Die Cu Pillar FCCSP) had be called for further discussion.Besides that, there are two concept also need to implement so as to smooth the achievement of sFCCSP-(a)bump on trace(BOT) structure (b) Open the solder mask of substrate which underneath the die area. Those two actions allow us to have a fine pitch metal interconnect with existed substrate manufacturing capability.At present, the sFCCSP package type has applied for lots of long life running product-such as hard disk driver, broadcast video terminal and security monitor applications ... and also for 28um (or finer) IC with deeply thermal requirement product. Discussion 1 Cu pillar bump product orientationThe existed fine pitch limitation of solder bump FCCSP is the collapse safeties distances while solder melting process.Existed solder type can be wettable for whole solder volume and it will cause a huge horizontal solder deformation phenomena (�typically is around extra 10% solder size) and this is a potential risk of solder bridge in fine pitch(smaller than 130um) case.
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