A series of SnO2–ZnO composite nanostructured (thin) films with different amounts of SnO2 (from 0 to 50 wt %) was prepared and deposited on a miniaturized porous alumina transducer using the sol–gel and dip coating method. The transducer, developed by our research group, contains Au interdigital electrodes on one side and a Pt heater on the other side. The sensing films were characterized using SEM and AFM techniques. Highly toxic and flammable gases (CO, CO2, CH4, and C3H8) were tested under lab conditions (carrier gas was dry air) using a special gas sensing cell developed by our research group. The gas concentrations varied between 5 and 2000 ppm and the optimum working temperatures were in the range of 210–300 °C. It was found that the sensing performance was influenced by the amount of oxide components present in the composite material. Improved sensing performance was achieved for the ZnO (98 wt %)–SnO2 (2 wt %) composite as compared to the sensors containing only the pristine oxides. The sensor response, cross-response and recovery characteristics of the analyzed materials are reported. The high sensitivity (R S = 1.21) to low amounts of CO (5 ppm) was reported for the sensor containing a composite sensitive film with ZnO (98 wt %)–SnO2 (2 wt %). This sensor response to CO was five times higher as compared to its response to CO2, CH4, and C3H8, thus the sensor is considered to be selective for CO under these test conditions.

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The effect of gel preparation and heat treatment on the structural and optical properties of SiO2-ZnO materials prepared by the sol–gel method was investigated. Zinc acetate dehydrate, TEOS (tetraethylortosilicate), ethanol, distillated water and HCl were used as a starting material, solvent and catalyst, respectively. Four powders (G1–G4) were prepared in different ways from the starting materials mentioned above. The method of adding Zn precursors during the synthesis differed from one another. For the G1 synthesis, only Zn acetate powder was employed; for the G2 synthesis, Zn acetate was dissolved in distilled water; and for the G3 synthesis, Zn acetate was dissolved in ethanol. When synthesizing G4, TEOS was added last, after Zn acetate had been combined with water and ethanol. The SiO2-ZnO materials were dried at 200 °C and then heat-treated at 700 °C and 900 °C. All samples were investigated by X-ray diffraction and infrared spectroscopy in order to investigate their structure. SEM measurements were performed to investigate the morphology of materials. Optical properties were influenced by gel preparation and heat treatments. A reflectance of over 60% was obtained for G3 and G4 powders, while for G1 and G2, the reflectance was below 30%. In conclusion, synthesis steps and heat treatment can control the structure and properties of the powders.

Nowadays, multifunctional materials are of high interest due to their ability to be used in different applications by controlling one or two parameters (e.g., morphology and/or dopant). Zinc oxide is an intensive-studied material because of its large usability. Recently, we have shown that the conduction, transparency, and charge carrier concentration of ZnO can be controlled by changing the dopants, leading to promising materials as transparent conductive oxide films. In this work, sol-gel (SG) and hydrothermal (HT) methods were used separately or in combination in order to obtain ZnO films doped with Mn (1, 2, and 5%) for possible application in transparent optoelectronics or as piezoelectric materials. The manganese (Mn) dopant in the form of anhydrous manganese acetate was used to obtain Mn-doped ZnO films. ZnO hydrothermal (HT) growth was made on a previously ZnO seed layer, formed by sol-gel method. The Mn-doped ZnO films were deposited on microscope glass and on Pt/Ti/SiO2/Si substrates. A comparative characterization of the films for their structure, morphology, and optical and piezoelectric properties was achieved. SG films exhibit equiaxed nanoparticles, with diameters around 50 nm, while the films prepared by HT show a homogeneous morphology consisting of uniform 1D nanorods, sized about 30 nm diameter and 200–300 nm length. XRD diffractograms evidenced the presence of zincite phase (wurtzite structure hexagonally close packed), with an improvement in crystallinity of the HT films (compared with SG ones), which present a stronger tendency to be oriented along (002) plane (c-axis) at 2% at Mn. Spectroscopic ellipsometry shows that the films obtained by SG are much thinner than the ones obtained by HT and that the refractive index is increasing with the percent of dopant. The band gap energy was found to decrease with the Mn doping level from 3.28 eV (undoped ZnO) to 3.10 eV (ZnO doped with 5 at% Mn) for the samples deposited on Pt/Ti/SiO2/Si. The maximum transmission is found for the undoped ZnO film and decreases with Mn concentration but remains over 78% in the visible range. From the piezoelectric tests, it was found that the d33 coefficient is much larger for the HT samples in comparison with the SG samples, especially for 2 and 5 at% Mn. The optical and piezoelectric results could be of interest for applications in optoelectronic or piezoelectric devices.

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