Thin films of composition Ti x Si 1±x O 2 were grown by low-pressure (LP) CVD on silicon (100) , as the sources of SiO 2 and TiO 2 , respectively. The substrate temperature was varied between 300 C and 535 C, and the individual precursor delivery rates ranged from 5 sccm to 100 sccm. Under these conditions, growth rates ranging from 0.6 nm min ±1 to 90.0 nm min ±1 were observed. As-deposited films were amorphous to X-rays, and cross-sectional transmission electron microscopy (TEM) images showed no compositional inhomogeneity. Rutherford backscattering (RBS) spectrometry revealed that the relative concentration of TiO 2 and SiO 2 was dependent upon the choice of TiO 2 precursor. Possible multi-precursor deposition scenarios are presented and discussed in relation to the observed variation of film stoichiometry. For the TTIP±TEOS pair, the systematic variation of Ti content with deposition conditions could be accounted for by a growth scenario that limits SiO 2 growth to TiO 2 sites within the composite film. For the case of TN±TEOS the Ti content remained close to 50 % for all conditions studied. A specific chemical reaction between TN and TEOS prior to film deposition accounts for the observed composition.
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