Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RFpower influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.
Effect of polarity in substrate for ZnO growth was researched. The zinc oxide films were deposited on SiOC/Si wafer by a RF magnetron sputtering system. SiOC film was also deposited by RF magnetron sputtering to obtain a low temperature process. Polarity in SiOC film changed with increasing the oxygen gas flow rates, and the chemical shift in the PL spectra was observed because of lowering the polarity of SiOC film caused by chemical reactions between CH group and OH group as the polar sites by high plasma energy. The chemical shift after ZnO deposition on SiOC film made was attributed to defects owing to the V o and Zn i and the valence band in ZnO at interfaces between ZnO and SiOC films. ZnO grown on SiOC film including polar sites changed the roughness owing to the induction of the trap charge resulted from the defects. The roughness of ZnO increased at SiOC with low polarity. SiOC with polar sites enhanced the level of blue emission deeply, and showed the blue shift in PL spectra.
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