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A copper electroplating process using a single organic additive was developed for filling through holes of printed circuit boards. The organic additive acted as an inhibitor of copper deposition in the presence of chloride ions and H2SO4. This copper electroplating formula resulted in center-up filling, which differs from the bottom-up filling exhibited by blind microvias. The inhibiting strength of the organic additive and the filling capability of the plating solution strongly depended on the concentration of H2SO4. The electrochemical behavior of the organic additive was characterized by electrochemical analyses and imaging of TH cross sections

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In this work, a copper plating formula that can directly and selectively fill the through silicon holes (TSHs) for 3D chip stacking packaging was developed. The copper plating technology reduced and simplified the process steps for fabricating through silicon vias (TSVs) and TSHs. The highly selectivity of copper fill in the TSHs also reduced the manufacture cost of 3D chip stacking packaging, because the copper plating technology reduced the loading of a post-copper chemical mechanical polishing (CMP) and did not need a post-thermal annealing treatment. The copper plating formula was very simple, just containing single organic additive

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Three new technologies for Cu coating and deposition in through silicon vias (TSVs) and through silicon holes (TSHs) were developed. One is to synthesize Cu nanoparticles (CuNPs) with a particle size of 3–5 nm and then coat the CuNPs onto the sidewall of TSVs by a wet process to act as catalysts for a seed layer formation through copper electroless deposition. The wet process for Cu seed layer formation can make sure of conformal coating and reduce the process cost of TSV. Second, we develop a new Cu electroplating formula that can make selective Cu fill (SCF) in TSVs, which leads to no increase in Cu thickness on the top surface after electroplating. The plating technique, SCF, can greatly reduce the loading of Cu CMP and the process cost of TSV. Finally, we develop a novel Cu plating technique for direct TSH filling, meaning that the conducting template assembled on one side of the TSH in advance is unnecessary. Cu can fill the TSH directly in a middle-up mode. This filling mode can make sure of no void after electroplating. In addition, the barrier layer employed herein was formed through CoWP electroless plating to replace the traditional dry process for cost cut.

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