ZrTe2 is a candidate topological material from the layered two-dimensional transition-metal dichalcogenide family, and thus the material may show exotic electrical transport properties and may be promising for quantum device applications. In this work, we report the successful growth of layered ZrTe2 thin film by pulsed-laser deposition and the experimental results of its magnetotransport properties. In the presence of a perpendicular magnetic field, the 60 nm thick ZrTe2 film shows a large magnetoresistance of 3000% at 2 K and 9 T. A robust linear magnetoresistance is observed under an in-plane magnetic field, and negative magnetoresistance appears in the film when the magnetic field is parallel to the current direction. Furthermore, the Hall results reveal that the ZrTe2 thin film has a high electron mobility of about 1.8 × 104 cm2 V–1 s–1 at 2 K. These findings provide insights into further investigations and potential applications of this layered topological material system.

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Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large RAHE is more than one order of magnitude larger than those previously reported value in topological insulators or TMDs based heterostructures.The magnetization of interfacial reaction-induced ZrO2 between YIG and ZrTe2 is believed to play a crucial role for the induced high-temperature anomalous Hall effect in the ZrTe2. These results reveal a promising system for the room-temperature spintronic device applications, and it may also open a new avenue toward introducing magnetism to TMDs and exploring the quantum AHE at higher temperatures considering the prediction of nontrivial topology in ZrTe2.

Integration of short-term plasticity (STP) and long-term plasticity (LTP) in a single layered SnSe-based device has been achieved.

The coming Big Data Era requires progress in storage and computing technologies. As an emerging memory technology, Resistive RAM (RRAM) has shown its potential in the next generation high-density storage and neuromorphic computing applications, which extremely demand low switching voltage and power consumption. In this work, a 10 nm-thick amorphous GeS2 thin film was utilized as the functional layer of RRAM in a combination with Ag and Pt electrodes. The structure and memory performance of the GeS2-based RRAM device was characterized — it presents high on/off ratio, fast switching time, ultralow switching voltage (0.15 V) and power consumption (1.0 pJ and 0.56 pJ for PROGRAM and ERASE operations, respectively). We attribute these competitive memory characteristics to Ag doping phenomena and subsequent formation of Ag nano-islands in the functional layer that occurs due to diffusion of Ag from electrode into the GeS2 thin film. These properties enable applications of GeS2 for low energy RRAM device.