Articles you may be interested inHighly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate J. Vac. Sci. Technol. B 26, 1560 (2008); 10.1116/1.2943667 200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers Appl. Phys. Lett. 87, 073107 (2005); 10.1063/1.2011772 Dry etching of amorphous-Si gates for deep sub-100 nm silicon-on-insulator complementary metal-oxide semiconductor J.In SiOCH ͑C-doped SiO 2 ͒ via etch application, high polymer deposition chemistry is needed for better selectivity to both photoresist and underlying barrier materials. To prevent etch stop, high ion energy plasma is required to achieve a good process window. C 4 F 6 /CH 3 F, etc., was used as via main etch chemistry for better selectivity and striation performance. However, wafer level microarcing ͑WLMA͒ was observed at the wafer edge around the guard ring. This WLMA phenomenon is different from that of the magnetically enhanced reactive ion etching or capacitively coupled plasma low-gap reactor. By process optimization, we managed to develop a process that is production-ramp worthy. We have also compared the rf parameters during via etch process on both silicon-on-insulator and bulk Si substrates, which shows no significant difference. The electrical and defect scan results suggest that it is free from WLMA.
The nature of deposited film on unmasked Si(100) surface after
high density HBr/Cl2/O2 plasma etching has been investigated. The
as-etched surface was treated sequentially with HF for different
duration and monitored with atomic force microscopy (AFM) and X-ray
photoelectron spectroscopy (XPS). It was found that microscopic Si
pillars are formed on the etched surface and might be attributed to
the formation of micromasks. XPS surface analysis indicated the
passivation film consists mainly of silicon oxides and oxybromides.
Ab initio calculations using Si4 cluster model suggested the direct
attack of oxyhalide species on the surface as the energetically most
favored process. It is also shown that HF treatment for 40 s was
effective in the complete removal of the residual film.
In advanced technology nodes, the BEOL requires advanced patterning techniques such as triple patterning (LELELE) and side wall image transfer techniques to form metal and via structures with pitches below 50nm. In this paper, we demonstrate metal critical dimension (CD) shrinkage using atomic layer deposition (ALD) enabled spacer layer to achieve sub-50 nm pitch. ALD spacer thickness is identified as the crucial parameter to achieve target CD. An optimization study correlating oxide thickness, final CD and electrical yield is presented. An optimized recipe that results in 50% shrinkage is identified with good electrical yield.
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