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Superconductivity was recently found in the tetragonal phase FeSe. A structural transformation from tetragonal to orthorhombic (or monoclinic, depending on point of view) was observed at low temperature, but was not accompanied by a magnetic ordering as commonly occurs in the parent compounds of FeAs-based superconductors. Here, we report the correlation between structural distortion and superconductivity in FeSe(1-x) thin films with different preferred growth orientations. The films with preferred growth along the c axis show a strong thickness dependent suppression of superconductivity and low temperature structural distortion. In contrast, both properties are less affected in the films with (101) preferred orientation. These results suggest that the low temperature structural distortion is closely associated with the superconductivity of this material.

Efforts have been made to elucidate the origin of d(0) magnetism in ZnO nanocactuses (NCs) and nanowires (NWs) using X-ray-based microscopic and spectroscopic techniques. The photoluminescence and O K-edge and Zn L3,2-edge X-ray-excited optical luminescence spectra showed that ZnO NCs contain more defects than NWs do and that in ZnO NCs, more defects are present at the O sites than at the Zn sites. Specifically, the results of O K-edge scanning transmission X-ray microscopy (STXM) and the corresponding X-ray-absorption near-edge structure (XANES) spectroscopy demonstrated that the impurity (non-stoichiometric) region in ZnO NCs contains a greater defect population than the thick region. The intensity of O K-edge STXM-XANES in the impurity region is more predominant in ZnO NCs than in NWs. The increase in the unoccupied (occupied) density of states at/above (at/below) the conduction-band minimum (valence-band maximum) or the Fermi level is related to the population of defects at the O sites, as revealed by comparing the ZnO NCs to the NWs. The results of O K-edge and Zn L3,2-edge X-ray magnetic circular dichroism demonstrated that the origin of magnetization is attributable to the O 2p orbitals rather than the Zn d orbitals. Further, the local density approximation (LDA) + U verified that vacancies in the form of dangling or unpaired 2p states (due to Zn vacancies) induced a significant local spin moment in the nearest-neighboring O atoms to the defect center, which was determined from the uneven local spin density by analyzing the partial density of states of O 2p in ZnO.

A ZnO nanoarchitecture, i.e., ZnO nanosheet (NS) framework, is demonstrated to be a promising electron acceptor and direct electron transport matrix for polymer‐inorganic hybrid solar cells. The ZnO NS framework is constructed on nanoneedles/indium tin oxide substrate via a room‐temperature chemical bath deposition (RT CBD). The framework morphology can be simply tailored by varying the concentration of precursor solution in the RT CBD. The ZnO nanoarchitecture with an appropriate free space between the NSs is consequently demonstrated to facilitate poly(3‐hexylthiophene) (P3HT) infiltration, resulting in superior interface properties, i.e., more efficient charge separation and less charge recombination, in the hybrid. Moreover, apart from the characteristics similar to the ZnO nanorod (NR) array, including vertical feature and single crystalline structure, the ZnO NS framework exhibits a slightly larger absorption edge and a faster electron transport rate. A notable efficiency of 0.88% is therefore attained in the ZnO NS‐P3HT hybrid solar cell, which is higher than that of the ZnO NR‐P3HT hybrid solar cell.

A ZnO nanoarchitecture composed of nanocactus (NCs) and nanosheets (NSs) is constructed on the ZnO-nanowire (NW)-array template within 4 min by a facile room-temperature (RT) chemical bath deposition (CBD) for use in dye-sensitized solar cells (DSSCs). Compared to the ZnO NW array, the spines and shells of NCs provide larger and more fitting surface for dye adsorption. The NSs developed on the top and side walls of the NWs afford the additional surface for dye adsorption as well as for light scattering. Moreover, the RT-grown ZnO nanostructures possess an upward-shifted conduction band edge and a fast electron transport rate compared to the primary ZnO NW array. With an anode thickness of 9 μm, an efficiency of 5.14% is therefore simply attained in the D149-sensitized ZnO NC-NS DSSC.

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