Amorphous-oxide thin-film-transistor (TFT) arrays have been developed as TFT backplanes for large-sized active-matrix organic light-emitting-diode (AMOLED) displays. An amorphous-IGZO (indium gallium zinc oxide) bottom-gate TFT with an etch-stop layer (ESL) delivered excellent electrical performance with a field-effect mobility of 21 cm 2 /V-sec, an on/off ratio of >10 8 , and a subthreshold slope (SS) of 0.29 V/dec. Also, a new pixel circuit for AMOLED displays based on amorphous-oxide semiconductor TFTs is proposed. The circuit consists of four switching TFTs and one driving TFT. The circuit simulation results showed that the new pixel circuit has better performance than conventional threshold-voltage (V TH ) compensation pixel circuits, especially in the negative state. A full-color 19-in. AMOLED display with the new pixel circuit was fabricated, and the pixel circuit operation was verified in a 19-in. AMOLED display. The AMOLED display with a-IGZO TFT array is promising for large-sized TV because a-IGZO TFTs can provide a large-sized backplane with excellent uniformity and device reliability.

Amorphous oxide thin film transistor (TFT) arrays have been developed as TFT backplanes for large size active-matrix organic light emitting diode (AMOLED) displays. An amorphous IGZO (Indium Gallium Zinc Oxide) bottom gate TFT with an etch-stop layer (ESL) delivered excellent electrical performance with fieldeffect mobility of 21 cm 2 /V-s, an on/off ratio of >10 8 , and subthreshold slope (SS) of 0.29V/dec. A full color 19-inch AMOLED display has been developed using the amorphous IGZO TFT backplane.