RF pulsed plasma characteristics of inductively coupled plasma (ICP) sources operated with internal linear type antennas for the next generation display processing were investigated. By applying the rf pulse mode in the ICP source, with decreasing the rf pulse duty percentage, the average electron temperature was decreased and the plasma non-uniformity was improved with decreasing the rf pulse duty percentage. In the case of plasma uniformity, for the same time average rf power of 3 kW to the ICP source, the plasma non-uniformity was improved from 8.4% at 100% of rf duty percentage to 6.4% at 60% of rf duty percentage due to the increased diffusion of the plasma during the pulse-off time. When SiO2 was etched using CF4, the etch rate uniformity was also improved due to the improvement of plasma uniformity.
U-shaped inductively coupled plasma (ICP) source was investigated as a linear plasma source for the next generation roll-to-toll flexible display processing. For the radio frequency power to the source, the dual frequency composed of 13.56 MHz and 2 MHz was used and the effect of dual frequency to the U-shaped ICP source on the plasma density, electron temperature, and plasma uniformity was investigated. As the operating condition, 200 mTorr Ar was used without operating turbo pumps. The use of superimposed dual frequency composed of 13.56 MHz + 2 MHz instead the single frequency of 13.56 MHz increased the plasma density slightly at the same total power. In addition, the addition of 2 MHz rf power to 0.4 kW while maintaining 1 kW 13.56 MHz rf power not only decreased electron temperature but also improved both the plasma uniformity and the process uniformity measured by photoresist etching. Therefore, by using the dual frequency to the U-shaped ICP source, not only the plasma density but also plasma uniformity could be improved in addition to the decrease of possible damage to the substrate.
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