Broadband photodetectors are a category of optoelectronic devices that have important applications in modern communication information. γ-InSe is a newly developed two-dimensional (2D) layered semiconductor with an air-stable, low-symmetry crystal...
sensors, high contrast of polarized light detection, and imaging. [1][2][3] As a key figure of merit, polarization sensitivity, defined as the ratio of maximum to minimum photocurrent in a photodetector upon polarized light illumination with varying polarization angles, can eventually determine the resolution and contrast of optical identification and imaging targets. [4] Conventional polarized light detectors utilizing optical filters suffer from complex fabrication and calibration processes, which increases the complexity and cost. [5] Devices based on 1D materials, including InP, [6] GaN, [7] Bi 1.85 ln 0.15 S 3 , [8] and Bi 2 Se 2 S [9] nanowires, have the capability of polarized light detection due to the anisotropic geometric effect. But most of them have poor polarization sensitivity and require complex preparation processes such as molecular beam epitaxy. In addition, it is rather difficult to integrate these nanochannels with substrates, such as silicon, because of their lattice mismatch, which limits the diversity and application of polarization-resolved devices. [10] Compared to 1D nanostructures, layered low-symmetric 2D materials with an in-plane anisotropic crystalline structure, such as BP, [11] Te, [12] SnS, [13] GeAs, [14] and ReS 2 , [15] are more suitable for the fabrication of polarized photodetectors due to their tunable bandgap, atomically thin profile, and transparency. [16]
Gradient alloyed quantum dots (QDs) are newly interesting photocatalysts for efficient solar-to-chemical energy conversion to solve increasing energy and environmental problems. Nevertheless, few studies have been devoted to exploring structure-property...
Hybrids composed of two-dimensional (2D) and zero-dimensional (0D) materials have demonstrated great application potentials in electronics and optoelectronics. The CdSe@Zn1−XCdXS (CSZCS) quantum dots (QDs) possess unique gradient band structure with a continuously increasing energy level along the radial direction from the center to the surface, which is favorable for light-harvesting, photocarrier transfer and promising for photovoltaic and photodetection applications. Here, the gradient alloyed CSZCS QDs, acting as a photosensitive layer, have been first integrated with 2D InSe as a carrier transport layer. The new 2D–0D hybrids exhibit a 300-fold improvement in responsivity compared with that of pristine InSe, which is much more superior to hybrids composed of core–shell CdSe@ZnS QDs/InSe. Thanks to the low dark current and large photo-gain induced by the photo-gating effect, the responsivity and detectivity of the CSZCS QDs/InSe photodetector can reach up to 30.16 A/W and 1.69 × 1012 Jones, respectively. This work provides a new kind of promising QDs with the gradient alloyed structure that can be explored into 2D–0D hybrids for further development of high-performance photodetectors.
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