Bottom gate and top contact thin film transistors were fabricated using In 2 O 3 thin films as active channel layers. Thin films of varying thicknesses in the range 5-20 nm were deposited on an SiO 2 gate dielectric by the thermal evaporation process in the presence of high purity oxygen. The results of atomic force microscopy show that all the films exhibit dense grain distribution with a root-mean-square roughness in the range 0.6-8.0 nm. Irrespective of the thickness of the channel layer, the on/off ratio of the device is 10 4 . The channel mobility and resistivity were found to be a strong function of the thickness of the active layer. The Levinson model was used to calculate the trap density and the grain boundary mobility. The low processing temperature shows the possibility of utilizing these devices on flexible substrates such as polymer substrates.
High-current, low-cost field emission triode using a reticulated vitreous carbon cathode J. Vac. Sci. Technol. B 28, C2C37 (2010); 10.1116/1.3305455 Influence of thin metal base thickness on the performance of CuPc vertical organic triodes Appl. Phys. Lett. 90, 153509 (2007);
Effects of substrate temperature on the device properties of pentacene-based thin film transistors using Al 2 O 3+x gate dielectric In this Letter, ambipolar transport properties of a bilayer of In 2 O 3 and a pentacene heterostructure have been realized. While In 2 O 3 thin film transistors exhibited a n-channel behavior, pentacene presumed p-channel characteristics on bare SiO 2 / p-Si substrates. However, when a bilayer of In 2 O 3 /pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n-and p-channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits.
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