In this study, we fabricate ZnO thin films with nano-crystalline Si (nc-Si) quantum dots (QDs) using a ZnO/Si multilayer deposition structure and a post-annealing process, and the formation of high crystallinity of Si QDs embedded in the crystalline ZnO matrix is demonstrated. For optical properties, the essential features of ZnO material, high transmission in long-wavelength and high absorption in short-wavelength ranges, are preserved. We observe significantly enhanced light absorption and an unusual photoluminescence emission peak contributed from the nc-Si QDs in the middle-wavelength range. In addition, we confirm the formation of optical sub-bandgap and the obtained value is quite close to the unusual PL emission peak. We show that meaningful sub-bandgap can form in ZnO thin film by embedding nc-Si QDs while maintaining the advantageous properties of ZnO matrix. This newly developed composite material, nc-Si QD embedded ZnO thin films, can be useful for various electro-optical applications.
A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer structure. Its optical transmittance is largely improved when increasing the annealing temperature, owing to the phase transformation from amorphous to nanocrystalline Si QDs embedded in the ZnO matrix. The sample annealed at 700°C exhibits not only high optical transmittance in the long-wavelength range but also better electrical properties including low resistivity, small turn-on voltage, and high rectification ratio. By using ZnO as the QDs’ matrix, the carrier transport is dominated by the multistep tunneling mechanism, the same as in a n-ZnO/p-Si heterojunction diode, which clearly differs from that using the traditional matrix materials. Hence, the carriers transport mainly in the ZnO matrix, not through the Si QDs. The unusual transport mechanism using ZnO as matrix promises the great potential for optoelectronic devices integrating Si QDs.
The 1999 Chi-Chi earthquake significantly altered the landscape of central Taiwan. Surface deformation produced by the earthquake along the trace of the Chelungpu thrust can be classified into two styles: (1) uplift without significant surface rupture, and (2) uplift accompanied by surface rupture. Here we examine areas that exhibited the first style of deformation (e.g. Wufeng). Seismic stress at the time of the main shock may have been relieved by high pore-fluid pressure in a 300-m-thick sand and gravel aquifer. Along the thrust fault, frictional heating of these sediments resulted in thermal expansion and an increase in pore-fluid pressure. High pore-fluid pressure damped seismic-wave energy and enhanced intergranular slips of unconsolidated sandy and gravel sediments, which were possibly assisted by sulphuric acid corrosion, leading to a high sulphate content in the groundwater (c. 70 mg L 1 ). These changes permitted surface folding and terracestyle uplifting to occur without significant rupture. In contrast, other areas in which the second style of deformation is dominant (e.g. Fengyuen-Shihkang) have thin (0-10 m) sand and gravel deposits and lower concentrations of sulphate (c. 30 mg L 1 ) in groundwater. In these areas, sediments were heated but not sufficiently to produce significant thermal expansion and increase in pore-fluid pressure; accumulation of stress in these locations led to rupture at the ground surface, with the formation of steep fault scarps. The areas exhibiting the first deformation style are characterized by the presence of high pore-fluid pressure, frictional heat conduction, and possibly chemical corrosion related to sulphuric acid attack and formation of sulphate, in contrast to those involving significant uplift and surface rupture. The areal distribution of these two surface deformation styles suggests that the aforementioned fluid-related subsurface processes may have altered the characteristics of sediments and caused diverse responses to the quake.
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