The quantum dots coated by silica is fluorescence material class with great biocompatibility, low toxicity and water-solubility, that is suitable for bioapplications. This work presents the synthesis of SiO2 coated CdTe/ZnSe (named CdTe) quantum dots (CdTe@SiO2 nanoparticles) via a wet chemmical route called modified Stöber method. The compounds tetraethylorthosilicate (TEOS) has used as precursors, aminopropyltriethoxysilane (APTES) is as electric neutralizer, and ammonium hydroxide is used as catalysts. The size of CdTe@SiO2 nanoparticles was estimated about 70 to 150 nm depending on the quantities of H2O, APTEOS, and catalysts. The emission behaviours of SiO2 coated quantum dots was effected by ratio of substances participating in the reaction and synthesis conditions. with the ratio (by volume) of suitable substances: TEOS:solution of QDs:NH4OH:APTES:H2O being 1.5:1.5x10-2:0.8x10-2:4x10-2:3x10-4:5x10-2, the prepared silica nanoparticles containing quantum dots show high fluorescence emission efficiency, the fluorescence intensity is higher than that of uncoated CdTe/ZnSe quantum dots. This is a positive result in the technique of manufacturing luminescent silica nanoparticles containing quantum dots. The results show an ability to use the CdTe@SiO2 nanoparticles for biological application.
Bright photoluminescent silicon nanoparticles were successfully fabricated from porous silicon target in air and n-hexane using 532 nm line of YAG:Nd pulsed laser. The whole procedure was carried out at room temperature, in atmosphere. The morphology and composition of as-synthesized nanoparticles were characterized by SEM and EDS measurements. Their optical properties were investigated. The PL peak position of the as-synthesized Si nanoparticle ablated in air is slightly blue-shifted in comparison with those ablated in n-hexane, while it was almost no change of peak position of Si nanoparticles fabricated from p-Si in hexane and original p-Si wafer target. In contrast to PL intensity quenching of original p-Si sample and particles produced in air, those produced in n-hexane solvent exhibited an enhancement. The presence of dangling bonds or energy transfer from excited Si particles to oxygen molecules on the surface can be the cause of the quenching effect.
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