Optical phase change materials (O-PCMs), a unique group of materials featuring exceptional optical property contrast upon a solid-state phase transition, have found widespread adoption in photonic applications such as switches, routers and reconfigurable meta-optics. Current O-PCMs, such as Ge–Sb–Te (GST), exhibit large contrast of both refractive index (Δn) and optical loss (Δk), simultaneously. The coupling of both optical properties fundamentally limits the performance of many applications. Here we introduce a new class of O-PCMs based on Ge–Sb–Se–Te (GSST) which breaks this traditional coupling. The optimized alloy, Ge2Sb2Se4Te1, combines broadband transparency (1–18.5 μm), large optical contrast (Δn = 2.0), and significantly improved glass forming ability, enabling an entirely new range of infrared and thermal photonic devices. We further demonstrate nonvolatile integrated optical switches with record low loss and large contrast ratio and an electrically-addressed spatial light modulator pixel, thereby validating its promise as a material for scalable nonvolatile photonics.

Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an appealing material solution for active metasurface devices with their large index contrast and nonvolatile switching characteristics. Here we report what we believe to be the first electrically reconfigurable nonvolatile metasurfaces based on O-PCMs. The O-PCM alloy used in the devices, Ge2Sb2Se4Te1 (GSST), uniquely combines giant non-volatile index modulation capability, broadband low optical loss, and a large reversible switching volume, enabling significantly enhanced light-matter interactions within the active O-PCM medium. Capitalizing on these favorable attributes, we demonstrated continuously tunable active metasurfaces with record half-octave spectral tuning range and large optical contrast of over 400%. We further prototyped a polarization-insensitive phase-gradient metasurface to realize dynamic optical beam steering.

Active metasurfaces, whose optical properties can be modulated post-fabrication, have emerged as an intensively explored field in recent years. The efforts to date, however, still face major performance limitations in tuning range, optical quality, and efficiency, especially for non-mechanical actuation mechanisms. In this paper, we introduce an active metasurface platform combining phase tuning in the full 2π range and diffraction-limited performance using an all-dielectric, low-loss architecture based on optical phase change materials (O-PCMs). We present a generic design principle enabling binary switching of metasurfaces between arbitrary phase profiles and propose a new figure-of-merit (FOM) tailored for reconfigurable meta-optics. We implement the approach to realize a high-performance varifocal metalens operating at 5.2 μm wavelength. The reconfigurable metalens features a record large switching contrast ratio of 29.5 dB. We further validate aberration-free and multi-depth imaging using the metalens, which represents a key experimental demonstration of a non-mechanical tunable metalens with diffraction-limited performance.

Optical phase shifters constitute the fundamental building blocks that enable programmable photonic integrated circuits (PICs)—the cornerstone of on-chip classical and quantum optical technologies [1, 2]. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state and information they carry are lost once the power is turned off—they are volatile. The volatility not only compromises energy efficiency due to their demand for constant power supply, but also precludes them from emerging applications such as in-memory computing. To circumvent this limitation, we introduce a phase shifting mechanism that exploits the nonvolatile refractive index modulation upon structural phase transition of Sb2Se3, a bi-state transparent phase change material (PCM). A zero-static power and electrically-driven phase shifter is realized on a CMOS-backend silicon-on-insulator platform, featuring record phase modulation up to 0.09 π/µm and a low insertion loss of 0.3 dB/π, which can be further improved upon streamlined design. Furthermore, we demonstrate phase and extinction ratio trimming of ring resonators and pioneer a one-step partial amorphization scheme to enhance speed and energy efficiency of PCM devices. A diverse cohort of programmable photonic devices is demonstrated based on the ultra-compact PCM phase shifter.

Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real‐world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcome these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on‐chip integration with different photonic platforms and do not disrupt their optical performances. Herein, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that uses undoped‐graphene microheaters to thermally and reversibly switch the optical phase‐change material Ge2Sb2Se4Te1 (GSST). An in situ Raman spectroscopy method is utilized to demonstrate, in real‐time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si3N4 integrated photonic circuits with small form‐factor modulators and reconfigurable metasurfaces displaying 2π phase coverage through neural‐network‐designed GSST meta‐atoms. This framework will enable scalable, low‐loss nonvolatile applications across a diverse range of photonics platforms.

We report measurements of near-field absorption in heavily silicon-doped indium arsenide microparticles using atomic force microscope infrared spectroscopy (AFM-IR). The microparticles exhibit an infrared absorption peak at 5.75 lm, which corresponds to a localized surface plasmon resonance within the microparticles. The near-field absorption measurements agree with far-field measurements of transmission and reflection, and with results of numerical solutions of Maxwell equations. AFM-IR measurements of a single microparticle show the temperature increase expected from Ohmic heating within the particle, highlighting the potential for high resolution infrared imaging of plasmonic and metamaterial structures. V

We present a formalism for understanding the electromagnetism of metasurfaces, optically thin composite films with engineered diffraction. The technique, diffractive interface theory (DIT), takes explicit advantage of the small optical thickness of a metasurface, eliminating the need for solving for light propagation inside the film and providing a direct link between the spatial profile of a metasurface and its diffractive properties. Predictions of DIT are compared with full-wave numerical solutions of Maxwell's equations, demonstrating DIT's validity and computational advantages for optically thin structures. Applications of the DIT range from understanding of fundamentals of light-matter interaction in metasurfaces to efficient analysis of generalized refraction to metasurface optimization.

We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral position and intensity of the absorption resonances are studied by reflection and transmission spectroscopy. Numerical models as well as an analytical description of the excited guided modes in our structures are presented, showing agreement with experiment. The structures investigated demonstrate a wavelength-flexible, all-semiconductor, plasmonic architecture with potential for both sensing applications and enhanced interaction of midinfrared radiation with integrated semiconductor optoelectronic elements.