Photovoltaic devices based on metal halide perovskites are rapidly improving in efficiency. Once the Shockley–Queisser limit is reached, charge-carrier extraction will be limited only by radiative bimolecular recombination of electrons with holes. Yet, this fundamental process, and its link with material stoichiometry, is still poorly understood. Here we show that bimolecular charge-carrier recombination in methylammonium lead triiodide perovskite can be fully explained as the inverse process of absorption. By correctly accounting for contributions to the absorption from excitons and electron-hole continuum states, we are able to utilise the van Roosbroeck–Shockley relation to determine bimolecular recombination rate constants from absorption spectra. We show that the sharpening of photon, electron and hole distribution functions significantly enhances bimolecular charge recombination as the temperature is lowered, mirroring trends in transient spectroscopy. Our findings provide vital understanding of band-to-band recombination processes in this hybrid perovskite, which comprise direct, fully radiative transitions between thermalized electrons and holes.

Optoelectronic properties are unraveled for formamidinium tin triiodide (FASnI ) thin films, whose background hole doping density is varied through SnF addition during film fabrication. Monomolecular charge-carrier recombination exhibits both a dopant-mediated part that grows linearly with hole doping density and remnant contributions that remain under tin-enriched processing conditions. At hole densities near 10 cm , a strong Burstein-Moss effect increases absorption onset energies by ≈300 meV beyond the bandgap energy of undoped FASnI (shown to be 1.2 eV at 5 K and 1.35 eV at room temperature). At very high doping densities (10 cm ), temperature-dependent measurements indicate that the effective charge-carrier mobility is suppressed through scattering with ionized dopants. Once the background hole concentration is nearer 10 cm and below, the charge-carrier mobility increases with decreasing temperature according to ≈T , suggesting that it is limited mostly by intrinsic interactions with lattice vibrations. For the lowest doping concentration of 7.2 × 10 cm , charge-carrier mobilities reach a value of 67 cm V s at room temperature and 470 cm V s at 50 K. Intraexcitonic transitions observed in the THz-frequency photoconductivity spectra at 5 K reveal an exciton binding energy of only 3.1 meV for FASnI , in agreement with the low bandgap energy exhibited by this perovskite.

A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy View the table of contents for this issue, or go to the journal homepage for more 2016 Semicond. Sci. Technol. 31 103003

Perovskite thin-film solar cells are one of the most promising emerging renewable energy technologies because of their potential for low-cost, large-area fabrication combined with high energy conversion efficiencies. Recently, formamidinium lead triiodide (FAPbI3) and other formamidinium (CH­(NH2)2) based perovskites have been explored as interesting alternatives to methylammonium lead triiodide (MAPbI3) because they exhibit better thermal stability. However, at present a major challenge is the scale-up of perovskite solar cells from small test-cells to full solar modules. We show that coevaporation is a scalable method for the deposition of homogeneous FAPbI3 thin films over large areas. The method allows precise control over film thickness and results in highly uniform, pinhole-free layers. Our films exhibited a high charge-carrier mobility of 26 cm2 V–1s–1, excellent optical properties, and a bimolecular recombination constant of 7 × 10–11 cm3 s–1. Solar cells fabricated using these vapor-deposited layers within a regular device architecture produced stabilized power conversion efficiencies of up to 14.2%. Thus, we demonstrate that efficient FAPbI3 solar cells can be vapor-deposited, which opens up a pathway toward large-area stable perovskite photovoltaics.

Reliable doping is required to realize many devices based on semiconductor nanowires. Group III-V nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not compromised by the inclusion of dopants. Here we show that GaAs nanowires can be n-type doped with negligible loss of electron mobility. Molecular beam epitaxy was used to fabricate modulation-doped GaAs nanowires with Al0.33Ga0.67As shells that contained a layer of Si dopants. We identify the presence of the doped layer from a high-angle annular dark field scanning electron microscopy cross-section image. The doping density, carrier mobility, and charge carrier lifetimes of these n-type nanowires and nominally undoped reference samples were determined using the noncontact method of optical pump terahertz probe spectroscopy. An n-type extrinsic carrier concentration of 1.10 ± 0.06 × 10(16) cm(-3) was extracted, demonstrating the effectiveness of modulation doping in GaAs nanowires. The room-temperature electron mobility was also found to be high at 2200 ± 300 cm(2) V(-1) s(-1) and importantly minimal degradation was observed compared with undoped reference nanowires at similar electron densities. In addition, modulation doping significantly enhanced the room-temperature photoconductivity and photoluminescence lifetimes to 3.9 ± 0.3 and 2.4 ± 0.1 ns respectively, revealing that modulation doping can passivate interfacial trap states.