No abstract

This study is devoted to a consistent derivation of an effective model Hamiltonian to describe spin transport along a helical pathway and in presence of spin-orbit interaction, the latter being induced by an external field with helical symmetry. It is found that a sizeable spin polarization of an unpolarized incoming state can be obtained without introducing phase breaking processes. For this, at least two energy levels per lattice site in the tight-binding representation are needed. Additionally, asymmetries in the effective electronic-coupling parameters as well as in the spin-orbit interaction strength must be present to achieve net polarization. For a fully symmetric system -in terms of electronic and spin-orbit couplings-no spin polarization is found. The model presented is quite general and is expected to be of interest for the treatment of spindependent effects in molecular scale systems with helical symmetry.

The functionality of organic semiconductor devices crucially depends on molecular energies, namely the ionisation energy and the electron affinity. Ionisation energy and electron affinity values of thin films are, however, sensitive to film morphology and composition, making their prediction challenging. In a combined experimental and simulation study on zinc-phthalocyanine and its fluorinated derivatives, we show that changes in ionisation energy as a function of molecular orientation in neat films or mixing ratio in blends are proportional to the molecular quadrupole component along the π-π-stacking direction. We apply these findings to organic solar cells and demonstrate how the electrostatic interactions can be tuned to optimise the energy of the charge-transfer state at the donor−acceptor interface and the dissociation barrier for free charge carrier generation. The confirmation of the correlation between interfacial energies and quadrupole moments for other materials indicates its relevance for small molecules and polymers.

Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C and zinc phthalocyanine n-doped with highly efficient benzimidazoline radicals (2-Cyc-DMBI). We study the role of doping-induced gap states, and, in particular, of the difference Δ between the electron affinity of the undoped material and the ionization potential of its doped counterpart. We show that this parameter is critical for the generation of free carriers and influences the conductivity of the doped films. Tuning of Δ may provide alternative strategies to optimize the electronic properties of organic semiconductors.