interface. According to this model, the charge density is in the order of 1019 monovalent ions/cm3. The charges are positive, and their density decreases from the electrolyte side to the Si side. This may be explained as follows. The positive ions at the silicon-silicon oxide interface are transported by the anodic electric field in the oxide to the electrolyte side of the oxide where they accumulate there waiting for the reaction with OH-ion near the contact surface with the electrolyte. The surface states were also studied, and their density was estimated to be in the order of 10'2/cm2. As grown, such oxide does not meet the gate oxide specification in MOS technology. It must be subjected to post-processing steps to enhance its quality. The transient capacitance and the transient current are modeled basically to obtain self-consistency. The good agreement with experimental results confirms the validity of the model and its relevant assumptions. The application of the model to explain the anodic oxidation reaction mechanism in HF electrolyte and the associate oscillation are under investigation.
M. Matsumura and S. R. Morrison, J. Electroanal.ABSTRACT Voltammetry on glassy carbon and steel rotating disk electrodes (RDE) was used to investigate the plating of ZnTe, an important material for heterojunction solar cells, by codeposition from acidic (pH 2 to 5) aqueous solutions containing Zn2 and TeO2. The influence of pH, TeO2, and Zn2 concentration, and mass transfer under controlled conditions is shown. From RDE at various [Zn2] and [TeO2] we can conclude that the plating of ZnTe is controlled by mass transfer of the tellurium precursor, and that Zn2 adsorption does not play a major role. The limitations of plating due to side reactions at pH (<3) and limited solubility of TeO2 at high pH (>3) can be overcome by using pH 4.5 and a special precursor. Optimized plating conditions and use of elevated temperatures led to the formation of stoichiometric, well-crystallized material.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.122.253.212 Downloaded on 2015-02-09 to IP
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