We report on a comparative study of spin Hall related effects and magnetoresistance in YIG|Pt and YIG|Ta bilayers. These combined measurements allow to estimate the characteristic transport parameters of both Pt and Ta layers juxtaposed to YIG: the spin mixing conductance G ↑↓ at the YIG|normal metal interface, the spin Hall angle ΘSH, and the spin diffusion length λ sd in the normal metal. The inverse spin Hall voltages generated in Pt and Ta by the pure spin current pumped from YIG excited at resonance confirm the opposite signs of spin Hall angles in these two materials. Moreover, from the dependence of the inverse spin Hall voltage on the Ta thickness, we extract the spin diffusion length in Ta, found to be λ Ta sd = 1.8 ± 0.7 nm. Both the YIG|Pt and YIG|Ta systems display a similar variation of resistance upon magnetic field orientation, which can be explained in the recently developed framework of spin Hall magnetoresistance.

Spintronics is a field of electronics based on using the electron spin instead of its charge. The recent advance in the manipulation of pure spin currents, i.e. angular momentum transfer not associated to conventional charge currents, has opened new opportunities to build spin based devices with low energy consumption [1]. It has also allowed to integrate ferromagnetic insulators in spintronic devices, either as spin sources [2][3][4][5][6] or spin conductors [2, 7, 8] using their magnetic excitations to propagate a spin signal. Antiferromagnetic insulators belong to another class of materials that can also sustain magnetic excitations, even with a higher group velocity [9]. Hence, they have potential as angular momentum conductors, possibly making faster spin devices. At the opposite end, angular momentum insulators are also required in spintronic circuits. The present letter underlines some essential features relevant for spin current conduction, based on measurements of angular momentum transmission in antiferromagnetic NiO and in the non-magnetic light element insulator SiO 2 .