In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poorly understood. Here, we combine room-temperature nano-optical imaging and spectroscopy of excitons in nanobubbles of localized strain in monolayer WSe2 with atomistic structural models to elucidate how strain induces nanoscale confinement potentials that give rise to highly localized exciton states in 2D semiconductors. Nano-optical imaging of nanobubbles in low-defect monolayers reveal localized excitons on length scales of ~10 nm at multiple sites along the periphery of individual nanobubbles, which is in stark contrast to predictions of continuum models of strain. These results agree with theoretical confinement potentials that are atomistically derived from measured topographies of existing nanobubbles. Our results provide one-of-a-kind experimental and theoretical insight of how strain-induced confinement-without crystalline defects-can efficiently localize excitons on length scales commensurate with exciton size, providing key nanoscale structure-property information for quantum emitter phenomena in monolayer WSe2.The intense light-matter interactions of two-dimensional (2D) monolayer transition metal dichalcogenides (1L-TMDs) are mediated by a diverse suite of excitonic phenomena that present a wealth of opportunities for novel optoelectronic functionalities in areas spanning from high- *

The observation of quantum light emission from atomically thin transition metal dichalcogenides has opened a new field of applications for these material systems. The corresponding excited chargecarrier localization has been linked to defects and strain, while open questions remain regarding the microscopic origin. We demonstrate that the bending rigidity of these materials leads to wrinkling of the two-dimensional layer. The resulting strain field facilitates strong carrier localization due to its pronounced influence on the band gap. Additionally, we consider charge carrier confinement due to local changes of the dielectric environment and show that both effects contribute to modified electronic states and optical properties. The interplay of surface wrinkling, strain-induced confinement, and local changes of the dielectric environment is demonstrated for the example of nanobubbles that form when monolayers are deposited on substrates or other two-dimensional materials.

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We examine the experimental requirements for realizing a high-gain Quantum free-electron laser (Quantum FEL). Beyond fundamental constraints on electron beam and undulator, we discuss optimized interaction geometries, include coherence properties along with the impact of diffraction, space-charge and spontaneous emission. Based on desired Quantum FEL properties, as well as current experimental capabilities, we provide a procedure for determining a corresponding set of experimental parameters. Even for an idealized situation, the combined constraints on space-charge and spontaneous emission put strong limits on sustaining the quantum regime over several gain lengths. Guided by these results we propose to shift the focus towards seeded Quantum FELs instead of continuing to aim for self-amplified spontaneous emission (SASE). Moreover, we point out the necessity of a rigorous quantum theory for spontaneous emission as well as for space-charge in order to identify possible loopholes in our line of argument.