Proton pump inhibitors (PPIs) are a class of medications used to suppress production of gastric acid, and indications for their use include the treatment of dyspepsia, gastroesophageal reflux disease, and gastric and duodenal ulcers. Proton pump inhibitors are also recommended for hospitalized patients in intensive care unit settings for prophylaxis of stress ulcers. In the short term, PPIs are quite effective at symptom relief and treatment of these acid-related conditions; however, no recommendations have been made for the frequently observed prophylactic use of PPIs in nonintensive medical and surgical inpatient settings. Although indications exist for long-term therapy (eg, hypersecretory states), longterm use is often not warranted.

PurposeThe authors, leading authorities on global innovation, warn that Western companies targeting emerging markets to help drive growth will likely find that the traditional strategy of global localization will prove inadequate. An alternative is their new concept of reverse innovation which this paper aims to introduce.Design/methodology/approachOne example is the portable ultrasound machine developed originally by GE in the early 2000s to meet the particular needs of the Chinese market. Technology advances have since helped propel the growth of a $250 million business opportunity for GE globally, through finding many new applications in the USA and other advanced economies.FindingsHistorically, multinationals innovated in rich countries and sold their products in poor countries. Reverse innovation is doing the opposite.Practical implicationsReverse innovation also highlights the potential for very low price‐point innovations originating in the developing world to generate new market demand back in the richer economies.Originality/valueReverse innovations can have global impact. Ultimately, they have the potential to migrate from poor countries to rich ones.

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Different types of electrochromic devices for thermal emittance modulation were developed in the spectral region from mid-to far-infrared ͑2-40 m͒. In all devices polycrystalline and amorphous tungsten oxide have been used as electrochromic and ion storage layer, respectively. Two types of all-solid-state devices were designed, one with a metal grid for the top and bottom electrode deposited on a highly emissive glass substrate, and another with a top metal grid electrode and a highly reflecting bottom metal electrode layer. Tantalum oxide is used as an ion conductor in both device types. The third device type consists of a polymeric ion conductor. All solid-state constituent layers were grown by either reactive or nonreactive dc or rf magnetron sputtering in a high vacuum environment. Modulation of the emittance is accomplished by reversible insertion of Li ions into polycrystalline WO 3 by applying and switching a small voltage across the structure. Spectrally dependent measured reflectance modulation of the device has been used to determine the device emissivity modulation with respect to the blackbody emissivity spectra at 300 K. Best device performance was found in both solid-state devices showing an emissivity modulation of about 20%.

Amorphous tantalum oxide thin films were deposited by reactive rf magnetron sputtering onto [001] silicon substrates. Growth temperature, oxygen partial pressure, and total gas pressure have been varied to obtain thin films with different densities. The thin films were analyzed by glancing angle-of-incidence x-ray diffraction, atomic force microscopy, and variable angle-of-incidence spectroscopic ellipsometry in the near infrared to vacuum ultraviolet spectral region for photon energies from E=1 to 8.5 eV, and in the infrared region from E=0.03 to 1 eV. We present the dielectric function of amorphous tantalum oxide obtained by line shape analysis of the experimental ellipsometric data over the range from E=0.03 to 8.5 eV (40 μm–145 nm). In the infrared spectral region the ellipsometric data were analyzed using Lorentzian line shapes for each absorption mode observed in the spectra. Amorphous tantalum oxide optical properties in the near infrared to vacuum ultraviolet spectral region were extracted by using a Kim and Garland parameter algorithm [C. C. Kim et al., Phys. Rev. B 45, 11 749 (1992)] in order to model the absorption due to the fundamental band gap of the material. We consider thin film porosity, and therefore analyzed the experimental ellipsometric data by an effective medium approach. We obtain information on the tantalum oxide optical properties, a percentage of void fraction, and film thickness. The “optical” percentage of void fractions corresponds to surface roughness measured by atomic force microscopy and depends on deposition parameters.